SiN插入层对GaN外延膜应力和光学质量的影响(英文)  

Influence of In-situ SiN_x Interlayer on Strain Relief and Optical Character of GaN Epilayer Grown on 6H-SiC

作　　者：宋世巍[1] 梁红伟[1,2] 申人升[1] 柳阳[1] 张克雄[1] 夏晓川[1] 杜国同[1,3] 

机构地区：[1]大连理工大学物理与光电工程学院,辽宁大连116024 [2]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050 [3]吉林大学电子科学与工程学院,吉林长春130012

出　　处：《发光学报》2013年第8期1017-1021,共5页Chinese Journal of Luminescence

基　　金：国家自然科学基金(60976010,61076045,11004020);国家863项目(2011AA03A102);中央高校项目(DUT12LK22,DUT11LK43,DUT11RC(3)45);高等学校博士学科点专项科研基金(20110041120045)资助项目

摘　　要：研究了MOCVD系统中原位SiN插入层对GaN薄膜应力和光学性质的影响。采用SiN插入层后,GaN薄膜的裂纹数量大大减少,薄膜所承受的张应力得到了一定的释放。同时,GaN薄膜的缺陷密度降低一倍,晶体质量得到了极大的改善。研究表明,位错密度的降低在GaN薄膜中留存较大的残余应力,补偿了降温过程中所引入的张应力。同样,随着SiN插入层的应用,低温PL谱的半峰宽降低,薄膜光学质量提高。最后研究了PL谱发光峰与应力的关系,得到了一个-13.8的线性系数。High quality GaN epilayers have been grown on 6H-SiC substrate by metal organic chemical vapor deposition(MOCVD) using an in situ porous SiN x interlayer.It was found that the SiN x interlayer played a very important role in strain relief and the enhancement of quality of GaN epilayer.Optical microscope studies revealed that the crack line density was reduced to 0.29 mm-1.Furthermore,the in-plane stress of 1.58 × 10-3 was measured by Raman spectra,representing a significant strain relief.The relaxation was assisted by the reduction of dislocation density.Finally,a linear coefficient characterizing the relationship between the band gap and the biaxial stress of the GaN epilayer was obtained.

关 键 词：SIN 应力弛豫 插入层 

分 类 号：O482.31[理学—固体物理]