量子阱数变化对InGaN/GaN发光二极管瞬态响应的影响(英文)  

Transient Analysis of InGaN / GaN Light-emitting Diode with Varied Quantum Well Number

作　　者：陈贵楚[1,2] 范广涵[1] 

机构地区：[1]华南师范大学光电子材料与技术研究所,广东广州510631 [2]肇庆学院物理系,广东肇庆526061

出　　处：《发光学报》2013年第10期1346-1350,共5页Chinese Journal of Luminescence

基　　金：国家自然科学基金面上项目(61176043)资助

摘　　要：理论上研究了当InGaN发光二极管(LED)有源区的量子阱数变化时,LED的大信号瞬态响应特性与这种变化的关系。结果来自于LED等效电路模型的SPICE模拟,模型参数的确定通过拟合已测量的LED的实验数据及模拟结果来实现。结果表明,LED光脉冲的上升时间随量子阱数的增加而增加,由3个量子阱构成的有源区是LED的优化结构。A rate equation model for static and dynamic behavior of InGaN /GaN light-emitting diode( LED) has been developed,and the model has been implemented on a SPICE circuit emulator. The model ’s parameters have been achieved by fitting simulated results with reported experimental data. The transient response of InGaN LEDs has been comparatively investigated by varying the number of quantum wells in their active region. The simulations show that the rise time of optical outpower increases with the number of wells,and the active region composed of three quantum wells is the optimized structure.

关 键 词：INGAN LED 电路模型 上升时间 

分 类 号：O482.31[理学—固体物理]