分子束外延生长的极性与非极性BeZnO薄膜的比较研究(英文)  

Comparative Study of Polar and Non-polar BeZnO Films Grown by Plasma-assisted Molecular Beam Epitaxy

作　　者：王玉超[1] 吴天准[2] 陈明明[1] 苏龙兴[1] 张权林[1] 汤子康[1,3] 

机构地区：[1]中山大学理工学院光电材料国家重点实验室,广东广州510000 [2]中国科学院深圳先进技术研究院,广东深圳518055 [3]香港科技大学物理系

出　　处：《发光学报》2013年第11期1483-1488,共6页Chinese Journal of Luminescence

基　　金：国家“973”项目(2011CB302000);国家自然科学基金重点项目(51232009)资助

摘　　要：采用分子束外延设备在不同晶面蓝宝石衬底上(c面,a面,r面)生长BeZnO薄膜。使用复合缓冲层生长得到了高质量的BeZnO薄膜,X射线衍射半高宽达到600 arcsec。在c面与a面蓝宝石衬底上生长得到了极性BeZnO薄膜,在r面蓝宝石上生长得到了非极性BeZnO薄膜。共振拉曼光谱测试结果表明薄膜中的Be含量在同一水平。相对于c面与a面蓝宝石上的极性BeZnO薄膜,生长在r面蓝宝石衬底上的非极性BeZnO薄膜具有较大的表面粗糙度以及较大的半高宽,但是其光致发光谱中的紫外发光峰远远强于极性BeZnO薄膜,并且黄绿光发光峰弱于极性BeZnO薄膜。BeZnO films were grown on different crystallographic planes( c-,a-and r-planes) of sapphire substrates using plasma-assisted molecular beam epitaxy( P-MBE). High quality BeZnO films were achieved using a multi-layer buffer design with full widths at half maximum( FWHMs) of rocking curves up to 600 arcsec. Polar BeZnO films were obtained on the a- and c-plane sapphire substrates,while the nonpolar ones were obtained on the r-plane sapphire substrate. The Raman spectroscopy confirmed the Be dopants in the ZnO were at the same level in three samples. The BeZnO sample grown on the r-sapphire substrate were found to have largest grains and higher FWHM, while the ones grown on a- and c-sapphire subatrates had the similar fine grains and lower FWHM. However,the photoluminescence( PL) spectra indicated the non-polar BeZnO sample had significantly stronger ultraviolet emission and weaker green emission than polar samples.

关 键 词：BeZnO 蓝宝石 晶体取向 分子束外延 光致发光 

分 类 号：TN304.054[电子电信—物理电子学]