电子辐照直拉硅中VO_2的红外光谱表征  

Infrared Studies of VO_2 Defect in Electron Irradiated Czochralski Silicon

作　　者：蔡莉莉[1] 冯翠菊[1] 陈贵锋[2] 

机构地区：[1]华北科技学院基础部物理教研室,北京101601 [2]河北工业大学材料学院,天津300130

出　　处：《材料科学与工程学报》2014年第2期251-254,共4页Journal of Materials Science and Engineering

基　　金：国家自然科学基金资助项目(50872028);河北省教育厅科技资助项目(Z2013024);中央高校基本科研业务费资助项目(JCB2013B09)

摘　　要：用能量为1.5MeV,剂量为1.8×101 8e/cm2的电子束辐照直拉硅单晶样品,通过傅里叶变换红外光谱技术(FTIS)研究了辐照后样品中VO2缺陷随退火温度的变化及其热稳定性。实验结果表明,辐照在样品中引入了VO2的亚稳态缺陷,其特征吸收峰在低温红外光谱中向高频方向移动,300℃热处理时该亚稳态缺陷转化为VO缺陷;400℃热处理样品中出现了VO2的稳态缺陷,450℃热处理该稳态缺陷的峰值强度达到最大,当退火温度达到550℃时,该稳态缺陷完全消失并转化为其它复杂的缺陷。这种稳态的VO2缺陷经历450℃长时间热处理表现出良好的热稳定性,而在500℃短时热处理后转化为其它缺陷。The infrared absorption technique was used to study the VO2 defect transformation and thermal stability in 1.5 MeV electron-irradiated Czochralski silicon with the dose of 1.8×101 8e/cm2.The results show that irradiation can introduce a metastable defect of VO2 which moves to higher frequency in the low temperature infrared spectrum.This metastable defect is decomposed into VO defect at 300℃ annealing.The steady-state defect of VO2appears in irradiated samples annealed at 400℃.It reaches maximum intensity at 450℃annealing and translates into other complex defects at 550℃ annealing.The steady-state VO2defect shows good stability during heat treatment at 450℃,while it is unstable after short-term annealing at 500℃.

关 键 词：电子辐照 傅里叶变换红外光谱(FTIS) 亚稳态缺陷 VO2复合体 

分 类 号：TN304.12[电子电信—物理电子学]