退火对金属表面等离激元增强ZnO薄膜发光的影响  

Effects of Annealing on Surface Plasmons Enhanced Light Emission from ZnO Films

作　　者：宋世燕 何海平[1] 孙陆威 叶志镇[1] 

机构地区：[1]浙江大学材料科学与工程学系,浙江杭州310027

出　　处：《材料科学与工程学报》2014年第3期331-334,共4页Journal of Materials Science and Engineering

基　　金：中央高校基本科研业务费专项资金资助(2014FZA4008)

摘　　要：本文采用脉冲激光沉积方法,在Si衬底上制备了ZnO薄膜。在制备好的薄膜上,用电子束蒸发沉积不同厚度的Al膜并进行快速热退火处理,系统研究了金属厚度、形貌及界面态对发光增强的影响。实验结果显示,在ZnO表面沉积一层金属薄膜时,ZnO的发光强度会降低,且随着金属厚度增加,发光强度越来越弱。当对镀有金属的样品进行退火处理后,ZnO的发光得到增强,且增强倍数在Al厚度为6nm时达到最大。这归因于退火形成的金属颗粒对金属有序表面等离激元的有效散射及退火造成的ZnO-Al界面态的变化。ZnO films were grown on silicon substrate by pulsed laser deposition and were then capped with Al films by electron beam evaporation.The results showed that the PL intensity of ZnO decreases with Al capping.However,when a rapid thermal annealing treatment was carried on the samples,the PL intensity of Al-capped ZnO is enhanced compared with the as-grown one,and the enhancement ratio reaches 6folds when the Al thickness is 6nm.SEM results show that the Al film turned into nanoparticles after annealing,while XPS results indicate the change of chemical states in the Al/ZnO interface region.Those changes may account for the different PL intensity of Al capped samples before and after annealing.

关 键 词：ZNO 金属表面等离激元 发光增强 界面态 

分 类 号：TN304.21[电子电信—物理电子学]