Development of an infrared detector: Quantum well infrared photodetector  

作　　者：LU Wei LI Ling ZHENG HongLou XU WenLan XIONG DaYuan 

机构地区：[1]National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China [2]Ministry of Education Laboratory for Polarization Material and Device,College of Information Sciences and Technology,East China Normal University,Shanghai 200241,China

出　　处：《Science China(Physics,Mechanics & Astronomy)》2009年第7期969-977,共9页中国科学：物理学、力学、天文学（英文版）

基　　金：Supported by the National Natural Science Foundation of China (Grant Nos 10474020, 10734090, and 60221502);the Key Program of Basic Research of China (Grant No 2004CB619004)

摘　　要：The progress in the quantum well infrared photo-detector (QWIP) based on quantum confinement in semiconductor in recent 10 years has been reviewed. The differences between QWIP and the HgCdTe (HCT) infrared detector as well as their compensation are analyzed. The outlook for near-future trends in QWIP technologies is also presented.The progress in the quantum well infrared photo-detector (QWIP) based on quantum confinement in semiconductor in recent 10 years has been reviewed. The differences between QWIP and the HgCdTe (HCT) infrared detector as well as their compensation are analyzed. The outlook for near-future trends in QWIP technologies is also presented.

关 键 词：INFRARED photoelectronics QWIP PROGRESS DEVELOPMENT TREND 

分 类 号：O471.1[理学—半导体物理]