Inducing effect of Pb(Zr_(0.4)Ti_(0.6))O_3 thin film derived by different processes in BiFeO_3/Pb(Zr_(0.4)Ti_(0.6))O_3 multilayer capacitor at room temperature  

作　　者：XIE Dan1, ZANG YongYuan1, LUO YaFeng1, REN TianLing1, LIU LiTian1 & DANG ZhiMin2 1 Institute of Microelectronics, Tsinghua University, Beijing 100084, China 2 College of Material Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China 

出　　处：《Science China(Technological Sciences)》2009年第1期10-14,共5页中国科学（技术科学英文版）

基　　金：Supported by the National Natural Science Foundation of China (Grant No. 60601003);Ying Tong Education Foundation (Grant No. 101063);International Cooperation Project from Ministry of Science and Technology of China (Grant No. 2008DFA12000)

摘　　要：BiFeO3/PZT multilayer capacitor was prepared on Pt(100)/Ti/SiO2/Si(100) substrate. PZT buffer layer was derived by MOCVD method (label: PZT1) and sputtering method (label: PZT2) respectively. XRD analysis indicated that high (110) orientation of BFO in the BFO/PZT1 structure was achieved. SEM analysis indicated a better microstructure in the BFO/PZT1 structure compared with BFO/PZT2. The remnant polarization of the BFO/PZT1 was 82.5 μC/cm2 at an applied voltage of 8 V, compared with that of 25.2 μC/cm2 in the BFO/PZT2 structure. The BFO/PZT1 multilayer exhibited little polarization fatigue (<1.5%) upon 1×1010 switching cycles, at an applied voltage of 4 V. The leakage current density was about 2×10?7 A/cm2 at an applied voltage 4 V, in the BFO/PZT1 capacitor. All the results indicated that PZT can act as an inducing layer to the BFO and the MOCVD derived PZT has more inducing effect to the BFO thin film at room temperature.BiFeO3/PZT multilayer capacitor was prepared on Pt(100)/Ti/SiO2/Si(100) substrate. PZT buffer layer was derived by MOCVD method (label: PZT1) and sputtering method (label: PZT2) respectively. XRD analysis indicated that high (110) orientation of BFO in the BFO/PZT1 structure was achieved. SEM analysis indicated a better microstructure in the BFO/PZT1 structure compared with BFO/PZT2. The remnant polarization of the BFO/PZT1 was 82.5 μC/cm2 at an applied voltage of 8 V, compared with that of 25.2 μC/cm2 in the BFO/PZT2 structure. The BFO/PZT1 multilayer exhibited little polarization fatigue (<1.5%) upon 1×1010 switching cycles, at an applied voltage of 4 V. The leakage current density was about 2×10?7 A/cm2 at an applied voltage 4 V, in the BFO/PZT1 capacitor. All the results indicated that PZT can act as an inducing layer to the BFO and the MOCVD derived PZT has more inducing effect to the BFO thin film at room temperature.

关 键 词：BFO PZT MOCVD properties FERAM 

分 类 号：TB383.2[一般工业技术—材料科学与工程]