云南高校图书馆联盟文献共享服务平台- FERAM

FERAM: 作品数：40被引量：20H指数：3; 导出分析报告; 相关领域：电子电信自动化与计算机技术更多>>; 相关作者：康晓旭程旭汤庭鳌欧阳晓平郭红霞更多>>; 相关机构：复旦大学清华大学湘潭大学中国科学院更多>>; 相关期刊：《中国集成电路》《功能材料》《Chinese Physics Letters》《Journal of Advanced Dielectrics》更多>>; 相关基金：国家自然科学基金国家教育部博士点基金国家重点基础研究发展计划国防科技技术预先研究基金更多>>

应用于FeRAM设计的铁电电容宏模型: 《中国集成电路》2024年第7期37-44,共8页王浩郭术明吴超; 本文结合实际铁电存储器的基本电路单元和读写原理,基于Preisach理论和铁电电畴矫顽电压概率密度函数一维分布近似提出了用于电路仿真的铁电电容宏模型。模型采用与spice兼容的Verilog-A语言实现,能够准确描述铁电电容的非饱和滞回特性...; 关键词：铁电存储器铁电电容宏模型 Preisach理论

On the relationship between imprint and reliability in Hf_(0.5)Zr_(0.5)O_(2) based ferroelectric random access memory: 《Journal of Semiconductors》2024年第4期42-47,共6页Peng Yuan Yuting Chen Liguo Chai Zhengying Jiao Qingjie Luan Yongqing Shen Ying Zhang Jibin Leng Xueli Ma Jinjuan Xiang Guilei Wang Chao Zhao; This research was supported by the National Key R&D Program of China(Grant No.2022YFB3606900);in part by the National Natural Science of China(Grant No.62004217).; The detrimental effect of imprint,which can cause misreading problem,has hindered the application of ferroelectric HfO_(2).In this work,we present results of a comprehensive reliability evaluation of Hf_(0.5)Zr_(0.5)O...; 关键词：FERAM HZO IMPRINT RELIABILITY

Hf_(0.5)Zr_(0.5)O_(2)1T–1C FeRAM arrays with excellent endurance performance for embedded memory: 《Science China(Information Sciences)》2023年第4期299-300,共2页Wenwu XIAO Yue PENG Yan LIU Huifu DUAN Fujun BAI Bing YU Qiwei REN Xiao YU Genquan HAN; supported by National Key Research and Development Project(Grant No.2018YFB2200500);National Natural Science Foundation of China(Grant Nos.62025402,62090033,91964202,92064003,61874081,62004149);Key Research Project of Zhejiang Lab(Grant No.2021MD0AC01)。; Since the initial report of HfO2-based ferroelectric films in 2011,great attention has been paid to ferroelectric field-effect transistors and ferroelectric random-access memories(FeRAMs)[1–3].Up to now,many efforts ...; 关键词：FERROELECTRIC ARRAYS performance

工作于宽电源范围下的FeRAM: 《今日电子》2017年第12期65-65,共1页; “MR45V100A／MR44V100A”1Mb铁电存储器（FeRAM）面向需要高速高频率的日志数据获取和紧急时高速数据备份的智能仪表／计量设备／医疗设备／金融终端等应用。; 关键词：FERAM 宽电源铁电存储器医疗设备计量设备智能仪表数据备份数据获取

Ferroelectric HfO_(2)-based materials for next-generation ferroelectric memories被引量：5: 《Journal of Advanced Dielectrics》2016年第2期1-11,共11页Zhen Fan Jingsheng Chen John Wang; the Singapore National Research Foundation under CRP Award No.NRF-CRP10-2012-02.; Ferroelectric random access memory(FeRAM)based on conventional ferroelectric perovskites,such as Pb(Zr,Ti)O_(3)and SrBi_(2)T_(2)O_(9),has encountered bottlenecks on memory density and cost,because those conventional p...; 关键词：HfO_(2) nonvolatile memory FERAM FERROELECTRIC thin film orthorhombic phase.

ROHM旗下LAPISS emiconductor开发出搭载超高速串行总线的铁电存储器“FeRAM MR44V064B/MR45V064B”: 《微型机与应用》2016年第4期84-84,共1页; ROHM集团旗下的LAPIS Semiconductor公司（蓝碧石半导体）面向需要高频日志数据采集和紧急时的高速数据备份的智能仪表、医疗保健设备、汽车导航系统等,开发出搭载串行总线的64 kbit铁电存储器注1（以下称＂FeRAM＂）＂MR44V064B/MR45V0...; 关键词：高速串行总线铁电存储器 FERAM Semiconductor 搭载开发医疗保健设备汽车导航系统

港芯科技推出两款CPU双界面智能卡芯片: 《金卡工程》2012年第8期48-48,共1页; 港芯科技一向致力于开发和生产以CPU为主的智能卡芯片，广泛地在不同的领域中使用。特别是非接触式智能卡芯片，早于2005年推出首个FeRAM双介面芯片，往后港芯科技因应市场的需求，使用不同的芯片工艺，例如eFLASH和EEPROM等，为客户订...; 关键词：智能卡芯片双界面 CPU 科技 EEPROM 非接触式 FERAM 介面

State-of-the-art flash memory devices and post-flash emerging memories被引量：3: 《Science China(Information Sciences)》2011年第5期1039-1060,共22页LU ChihYuan LUE HangTing; Although conventional Floating gate （FG） flash memory has recently gone into the 2X nm node, the technology challenges are formidable below 20 nm. Charge-trapping （CT） devices are promising to scale beyond 20 nm b...; 关键词：non-volatile memory charge-trapping （CT） device NOR Flash NAND Flash BE-SONOS 3DNAND VG NAND FERAM MRAM RERAM

面向纳电子时代的非易失性存储器被引量：1: 《电子设计技术 EDN CHINA》2010年第3期64-64,共1页Agostino Pirovano Roberto Bez; 目前，业界对两大类全新的非易失性存储器进行了可行性调研，其中一类是基于无机材料的存储器技术，如铁电存储器（FeRAM）、磁阻存储器（MRAM）或相变存储器（PCM），另一类存储器技术则基于有机材料，铁电或导电开关聚合物。值得注意...; 关键词：非易失性存储器 FERAM MRAM PCM

Inducing effect of Pb(Zr_(0.4)Ti_(0.6))O_3 thin film derived by different processes in BiFeO_3/Pb(Zr_(0.4)Ti_(0.6))O_3 multilayer capacitor at room temperature被引量：2: 《Science China(Technological Sciences)》2009年第1期10-14,共5页XIE Dan1, ZANG YongYuan1, LUO YaFeng1, REN TianLing1, LIU LiTian1 & DANG ZhiMin2 1 Institute of Microelectronics, Tsinghua University, Beijing 100084, China 2 College of Material Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China; Supported by the National Natural Science Foundation of China (Grant No. 60601003);Ying Tong Education Foundation (Grant No. 101063);International Cooperation Project from Ministry of Science and Technology of China (Grant No. 2008DFA12000); BiFeO3/PZT multilayer capacitor was prepared on Pt(100)/Ti/SiO2/Si(100) substrate. PZT buffer layer was derived by MOCVD method (label: PZT1) and sputtering method (label: PZT2) respectively. XRD analysis indicated th...; 关键词：BFO PZT MOCVD properties FERAM

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