Ferroelectric HfO_(2)-based materials for next-generation ferroelectric memories  

作　　者：Zhen Fan Jingsheng Chen John Wang 

机构地区：[1]Department of Materials Science and Engineering National University of Singapore,Singapore 117575

出　　处：《Journal of Advanced Dielectrics》2016年第2期1-11,共11页先进电介质学报（英文）

基　　金：the Singapore National Research Foundation under CRP Award No.NRF-CRP10-2012-02.

摘　　要：Ferroelectric random access memory(FeRAM)based on conventional ferroelectric perovskites,such as Pb(Zr,Ti)O_(3)and SrBi_(2)T_(2)O_(9),has encountered bottlenecks on memory density and cost,because those conventional perovskites suffer from various issues mainly including poor complementary metal-oxide-semiconductor(CMOS)-compatibility and limited scalability.Next-generation cost-efficient,high-density FeRAM shall therefore rely on a material revolution.Since the discovery of ferroelectricity in Si:HfO_(2)thin films in 2011,HfO_(2)-based materials have aroused widespread interest in the field of FeRAM,because they are CMOS-compatible and can exhibit robust ferroelectricity even when the film thickness is scaled down to below 10 nm.A review on this new class of ferroelectric materials is therefore of great interest.In this paper,the most appealing topics about ferroelectric HfO_(2)-based materials including origins of ferroelectricity,advantageous material properties,and current and potential applications in FeRAM,are briefly reviewed.

关 键 词：HfO_(2) nonvolatile memory FERAM FERROELECTRIC thin film orthorhombic phase. 

分 类 号：TP3[自动化与计算机技术—计算机科学与技术]