On the relationship between imprint and reliability in Hf_(0.5)Zr_(0.5)O_(2) based ferroelectric random access memory  

作　　者：Peng Yuan Yuting Chen Liguo Chai Zhengying Jiao Qingjie Luan Yongqing Shen Ying Zhang Jibin Leng Xueli Ma Jinjuan Xiang Guilei Wang Chao Zhao 

机构地区：[1]Beijing Superstring Academy of Memory Technology,Beijing 100176,China

出　　处：《Journal of Semiconductors》2024年第4期42-47,共6页半导体学报（英文版）

基　　金：This research was supported by the National Key R&D Program of China(Grant No.2022YFB3606900);in part by the National Natural Science of China(Grant No.62004217).

摘　　要：The detrimental effect of imprint,which can cause misreading problem,has hindered the application of ferroelectric HfO_(2).In this work,we present results of a comprehensive reliability evaluation of Hf_(0.5)Zr_(0.5)O_(2)-based ferroelectric random access memory.The influence of imprint on the retention and endurance is demonstrated.Furthermore,a solution in circuity is pro-posed to effectively solve the misreading problem caused by imprint.

关 键 词：FERAM HZO IMPRINT RELIABILITY 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]