Structural and optical characteristics of Al_xGa_(1-x)N/AlN superlattice  

作　　者：XIE ZiLi1, ZHANG Rong1, JIANG RuoLian1, LIU Bin1, GONG HaiMei2, XIU XiangQian1, CHEN Peng1, LU Hai1, HAN Ping1, SHI Yi1 & ZHENG YouDou1 1 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Physical Department of Nanjing University, Nanjing 210093, China 2 Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China 

出　　处：《Science China(Technological Sciences)》2009年第2期332-335,共4页中国科学（技术科学英文版）

基　　金：Supported by the Special Funds for Major State Basic Research Project (973 Project) (Grant No.2006CB6049);the Hi-tech Research Project (Grant Nos.2006AA03A103,2006AA03A118,and 2006AA03A142);the National Natural Science Foundation of China (Grant No.60676057);the Research Fund for the Doctoral Program of Higher Education of China (Grant No.20050284004)

摘　　要：AlN/Al0.3Ga0.7N superlattices were grown on (0001) sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The superlattice period varies from 6 to 30. The layer thickness of different period stack was designed. GaN or AlGaN template was employed for growing AlN/AlGaN superlattices. Reflectivity, SEM, AFM and XRD data of the AlxGa1-xN/AlN superlattices are presented. It is found that the templates used have an intensive impact on surface roughness and interfacial properties of following AlN/AlGaN superlattices. The result of atomic force microscopy indicates that AlN/AlGaN superlattices grown on GaN template exhibit quasi-two-dimensional growth mode. The resulting superlattice has a smooth surface morphology and distinct interface. No crack is observed in the area of a 2-inch wafer.AlN/Al0.3Ga0.7N superlattices were grown on (0001) sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The superlattice period varies from 6 to 30. The layer thickness of different period stack was designed. GaN or AlGaN template was employed for growing AlN/AlGaN superlattices. Reflectivity, SEM, AFM and XRD data of the AlxGa1-xN/AlN superlattices are presented. It is found that the templates used have an intensive impact on surface roughness and interfacial properties of following AlN/AlGaN superlattices. The result of atomic force microscopy indicates that AlN/AlGaN superlattices grown on GaN template exhibit quasi-two-dimensional growth mode. The resulting superlattice has a smooth surface morphology and distinct interface. No crack is observed in the area of a 2-inch wafer.

关 键 词：MOCVD SUPERLATTICES AlxGa1-xN/AlN 

分 类 号：TG174.4[金属学及工艺—金属表面处理]