Study on the thermal stability and electrical properties of the high-k dielectrics (ZrO_2) _x(SiO_2)_(1-x)  

作　　者：Lü ShiCheng1,2, YIN Jiang1,2, XIA YiDong2,3, GAO LiGang2,3 & LIU ZhiGuo2,3 1 Department of Physics, Nanjing University, Nanjing 210093, China 2 National Laboratory of Solid Sate Microstructures, Nanjing University, Nanjing 210093, China 3 Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China 

出　　处：《Science China(Technological Sciences)》2009年第8期2222-2226,共5页中国科学（技术科学英文版）

基　　金：Supported by the National Nature Science Foundation of China (Grant No. 60636010) ;the National Basic Research Program of China ("973" Program) (Grant No. 2004CB619004)

摘　　要：(ZrO2)x(SiO2)1-x (Zr-Si-O) films with different compositions were deposited on p-Si(100) substrates by using pulsed laser deposition technique. X-ray photoelectron spectra (XPS) showed that these films remained amorphous after annealing at 800℃ with RTA process in N2 for 60 s. The XPS spectra indi- cated that Zr-Si-O films with x=0.5 suffered no obvious phase separation after annealing at 800℃, and no interface layer was formed between Zr-Si-O film and Si substrate. While Zr-Si-O films with x >0.5 suffered phase separation to precipitate ZrO2 after annealing under the same condition, and SiO2 was formed at the interface. To get a good interface between Zr-Si-O films and Si substrate, Zr-Si-O films with bi-layer structure (ZrO2)0.7(SiO2)0.3/(ZrO2)0.5(SiO2)0.5/Si was deposited. The electrical properties showed that the bi-layer Zr-Si-O film is of the lowest equivalent oxide thickness and good interface with Si substrate.(ZrO2)x(SiO2)1-x (Zr-Si-O) films with different compositions were deposited on p-Si(100) substrates by using pulsed laser deposition technique. X-ray photoelectron spectra (XPS) showed that these films remained amorphous after annealing at 800℃ with RTA process in N2 for 60 s. The XPS spectra indi- cated that Zr-Si-O films with x=0.5 suffered no obvious phase separation after annealing at 800℃, and no interface layer was formed between Zr-Si-O film and Si substrate. While Zr-Si-O films with x >0.5 suffered phase separation to precipitate ZrO2 after annealing under the same condition, and SiO2 was formed at the interface. To get a good interface between Zr-Si-O films and Si substrate, Zr-Si-O films with bi-layer structure (ZrO2)0.7(SiO2)0.3/(ZrO2)0.5(SiO2)0.5/Si was deposited. The electrical properties showed that the bi-layer Zr-Si-O film is of the lowest equivalent oxide thickness and good interface with Si substrate.

关 键 词：HIGH-K dielectric film PULSED laser deposition PSEUDO TERNARY alloy 

分 类 号：O614.412[理学—无机化学]