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HIGH-K: 作品数：112被引量：111H指数：5; 导出分析报告; 相关领域：电子电信天文地球更多>>; 相关作者：何刚张寅周静涛刘延辉王弘更多>>; 相关机构：南京大学山东大学复旦大学上海交通大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划中国博士后科学基金更多>>

Geochemistry and petrogenesis of magnesian high-K granitoids from Bundelkhand Craton,Central India:New insights into crustal evolution: 《Acta Geochimica》2025年第1期36-58,共23页Shailendra K.Prajapati Meraj Alam Parashar Mishra Hemant Kumar; Geological Survey of India,Northern Region have provided the financial funding for the study.; Background The Bundelkhand Craton is significant for preserving the multiphase granitoids magmatism from Paleoarchean to Neoarchean periods.It consists of a variety of granite rocks,including TTGs,sanukitoids,and high...; 关键词：GEOCHEMISTRY PETROGENESIS A-type granites Crustal evolution Bundelkhand craton

4H-SiC基功率器件的high-k栅介质材料研究进展: 《人工晶体学报》2024年第12期2027-2042,共16页刘帅宋立辉杨德仁皮孝东; 浙江大学杭州国际科创中心人才专项(02010600-K02013005)。; 金属氧化物半导体场效应晶体管(MOSFET)作为碳化硅绝缘栅结构的典型器件被广泛使用,然而SiO_(2)介电常数低的缺点和SiO_(2)/4H-SiC界面特性差的问题一直制约着4H-SiC绝缘栅结构(金属-绝缘体-半导体,MIS)器件更大规模商业化应用,因此科...; 关键词：4H-SiC MOS电容器 high-k栅介质材料堆栈栅介质界面特性电学性能

WS_(2)场效应晶体管的表面电子掺杂: 《桂林电子科技大学学报》2024年第2期111-117,共7页李海鸥冯天旸刘兴鹏; 国家自然科学基金(61874036,61805053);广西精密导航技术及应用重点实验室基金(DH202020,DH202001)。; 二硫化钨(WS_(2))属于过渡金属硫族化合物(TMDs)材料,具有较宽的可调带隙(1.3~2.1 e V),缺陷密度相对较低,且有超高的表面积比,可通过外界掺杂或相变处理来改善载流子传输性能,在低功耗场效应晶体管和超灵敏光电探测器等领域有广阔的应...; 关键词：二硫化钨 HIGH-K 三乙胺背栅晶体管电学性能

Pushing the high-k scalability limit with a superparaelectric gate layer: 《Journal of Advanced Ceramics》2024年第4期539-547,共9页Kun Wang Chao Liu Yuan Zhang Fuyu Lv Jun Ouyang Houbing Huang Rui-Long Yang Yu-Yao Zhao Hongbo Cheng Hanfei Zhu Xiaoming Shi Yun Tian; the National Natural Science Foundation of China(Nos.51772175 and 52002192);the Natural Science Foundation of Shandong Province(Nos.ZR2022ZD39,ZR2020QE042,ZR2022ME031,and ZR2022QB138);the Science,Education and Industry Integration Pilot Projects of Qilu University of Technology(Shandong Academy of Sciences)(Nos.2022GH018 and 2022PY055);Jun Ouyang acknowledges the support from the Jinan City Science and Technology Bureau(No.2021GXRC055);the Education Department of Hunan Province/Xiangtan University(No.KZ0807969).; To meet the expectation set by Moore’s law on transistors,the search for thickness-scalable high dielectric constant(k)gate layers has become an emergent research frontier.Previous investigations have failed to solve...; 关键词：HIGH-K TRANSISTORS Moore's law superparaelectric insulation robustness

Investigation of degradation and recovery characteristics of NBTI in 28-nm high-k metal gate process: 《Chinese Physics B》2023年第12期628-635,共8页巩伟泰李闫孙亚宾石艳玲李小进; Degradation induced by the negative bias temperature instability(NBTI)can be attributed to three mutually uncoupled physical mechanisms,i.e.,the generation of interface traps(ΔV_(IT)),hole trapping in pre-existing ga...; 关键词：negative bias temperature instability(NBTI) high-k metal gate(HKMG) threshold voltage shift interface trap gate oxide defect

A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance: 《Journal of Semiconductors》2023年第5期53-61,共9页Moufu Kong Zewei Hu Ronghe Yan Bo Yi Bingke Zhang Hongqiang Yang; supported in part by the National Natural Science Foundation of China(Grant No.61974015);Key R&D Project of Science and Technology Plan of the Sichuan province(Grant No.2021YFG0139);the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices of China(Grant No.KFJJ201806)。; A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode(Hk-SJ-SBD MOSFET)is proposed,and has been compared with the SiC high-k MOSFET(Hk MOSFET),S...; 关键词：SIC MOSFET specific on-resistance breakdown voltage HIGH-K SUPERJUNCTION switching performance reverse recovery characteristic

Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure: 《Chinese Physics B》2023年第1期470-477,共8页田魁元刘勇杜江锋于奇; Project supported by the National Natural Science Foundation of China (Grant No.61376078);the Natural Science Foundation of Sichuan Province,China (Grant No.2022NSFSC0515)。; A vertical junction barrier Schottky diode with a high-K/low-K compound dielectric structure is proposed and optimized to achieve a high breakdown voltage(BV).There is a discontinuity of the electric field at the inte...; 关键词：GaN junction barrier Schottky diode compound dielectric breakdown voltage turn-on voltage

Flexible high-performance microcapacitors enabled by all-printed two-dimensional nanosheets: 《Science Bulletin》2022年第24期2541-2549,M0004,共10页Pengxiang Zhang Yushui Fu Xin Zhang Xihua Zhang Bao-Wen Li Ce-Wen Nan; supported by the Basic Science Center Program of National Natural Science Foundation of China(51788104);the National Natural Science Foundation of China(52172124 and51872214);the Fundamental Research Funds for the Central Universities(WUT:2021III019JC,2018III041GX)。; Chemically exfoliated nanosheets have exhibited great potential for applications in various electronic devices.Solution-based processing strategies such as inkjet printing provide a low-cost,environmentally friendly,a...; 关键词：High-k perovskite nanosheets Inkjet printing Microcapacitors Dielectric enhancement Interface effect

Paleo-and Mesoarchean TTG-sanukitoid to high-K granite cycles in the southern São Francisco craton,SE Brazil: 《Geoscience Frontiers》2022年第5期153-168,共16页Claudio de Morisson Valeriano Caio Vinicius Gabrig Turbay Henrique Bruno Antonio Simonetti Monica Heilbron Samuel Moreira Bersan Rob Strachan; support from the PRONAGEO mapping program of the CPRM(Brazilian Geological Service);funding to CMV and MH respectively。; The generation of the continental crust is widely accepted to have taken place predominantly in the Archean,when TTG magmatism associated with greenstone-belt supracrustal succession development was typically followed...; 关键词：Crustal evolution Sm–Nd Lu–Hf LA-ICPMS zircon U–Pb

Cross-Scale Synthesis of Organic High-k Semiconductors Based on Spiro-Gridized Nanopolymers被引量：5: 《Research》2022年第2期111-122,共12页Dongqing Lin Wenhua Zhang Hang Yin Haixia Hu Yang Li He Zhang Le Wang Xinmiao Xie Hongkai Hu Yongxia Yan Haifeng Ling Jin'an Liu Yue Qian Lei Tang Yongxia Wang Chaoyang Dong Linghai Xie Hao Zhang Shasha Wang Ying Wei Xuefeng Guo Dan Lu Wei Huang; supported by the National Natural Science Foundation of China(21774061,22071112,and 61935017);National Key Laboratory(2009DS690095);Natural Science Foundation Major Research Program Integration Project(Grant Number 91833306);Natural Science Fund for Colleges and Universities in Jiangsu Province(20KJB150038);and Open Project from State Key Laboratory of Supramolecular Structure and Materials at jilin University(No.sklssm202014 and sklssm202108).; High dielectric constants in organic semiconductors have been identified as a central challenge for the improvement in not only piexoelectric,preolecric,and freeltric efcts but also photoclecric conversion eficiency i...; 关键词：dielectric CHARGE AMORPHOUS

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