云南高校图书馆联盟文献共享服务平台- SUPERJUNCTION

SUPERJUNCTION: 作品数：18被引量：21H指数：3; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：李肇基方健乔明黄淮吴郁更多>>; 相关机构：电子科技大学北京工业大学更多>>; 相关期刊：《物理学报》《Journal of Semiconductors》《The Journal of China Universities of Posts and Telecommunications》《Chinese Physics B》更多>>; 相关基金：国家自然科学基金国家教育部博士点基金更多>>

Recent developments in superjunction power devices: 《Journal of Semiconductors》2024年第11期18-35,共18页Chao Ma Weizhong Chen Teng Liu Wentong Zhang Bo Zhang; Superjunction(SJ)is one of the most innovative concepts in the field of power semiconductor devices and is often referred to as a"milestone"in power MOS.Its balanced charge field modulation mechanism breaks through th...; 关键词：super junction silicon limit power semiconductor device design theory

Superjunction 4H-SiC trench-gate IGBT with an integrated clamping PN diode: 《The Journal of China Universities of Posts and Telecommunications》2024年第2期3-9,27,共8页Huang Yi Wang Xuecheng Gao Sheng Liu Bin Zhang Hongsheng Han Genquan; the General Program of National Natural Science Foundation of Chongqing(CSTB2023NSCQ-MSX0475);the Doctoral Research Start-up Fund of Chongqing University of Posts and Telecommunications(A2023-7);the Technology Innovation and Application Demonstration Key Project of Chongqing Municipality(cstc2019jszx-zdztzxX0005,cstc2020jscx-gksbX0011)。; In this paper,a novel superjunction 4H-silicon carbide(4H-SiC)trench-gate insulated-gate bipolar transistor(IGBT)featuring an integrated clamping PN diode between the P-shield and emitter(TSD-IGBT)is designed and theo...; 关键词：4H-silicon carbide(4H-SiC) trench-gate SUPERJUNCTION clamping diode

A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance: 《Journal of Semiconductors》2023年第5期53-61,共9页Moufu Kong Zewei Hu Ronghe Yan Bo Yi Bingke Zhang Hongqiang Yang; supported in part by the National Natural Science Foundation of China(Grant No.61974015);Key R&D Project of Science and Technology Plan of the Sichuan province(Grant No.2021YFG0139);the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices of China(Grant No.KFJJ201806)。; A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode(Hk-SJ-SBD MOSFET)is proposed,and has been compared with the SiC high-k MOSFET(Hk MOSFET),S...; 关键词：SIC MOSFET specific on-resistance breakdown voltage HIGH-K SUPERJUNCTION switching performance reverse recovery characteristic

Review of Technologies for High-Voltage Integrated Circuits被引量：1: 《Tsinghua Science and Technology》2022年第3期495-511,共17页Bo Zhang Wentong Zhang Le Zhu Jian Zu Ming Qiao Zhaoji Li; High-Voltage power Integrated Circuits(HVICs) are widely used to realize high-efficiency power conversions(e.g., AC/DC conversion), gate drivers for power devices and LED lighting, and so on. The Bipolar-CMOS-DMOS(BCD...; 关键词：High-Voltage ICs(HVICs) high-voltage integrated technology Bipolar-CMOS-DMOS(BCD)process integrated power semiconductor devices SUPERJUNCTION

Novel SiC SBD-wall-integrated trench MOSFET with a semi-superjunction and split trench gate: 《Science China(Information Sciences)》2022年第6期277-278,共2页Xiaorong LUO Junyue HUANG Xu SONG Qinfeng JIANG Jie WEI Jian FANG Fei YANG; supported by National Key Research and Development Program of China(Grant No.2016YFB0400502);Postdoctoral Innovative Talent Support Program(Grant No.BX20190059)。; Dear editor,SiC MOSFET has the advantages of low specific onresistance(Ron,sp),high breakdown voltage(BV),high operating temperature,and low thermal resistance.As a switching device,SiC MOSFET needs an anti-paralleled...; 关键词：TRENCH DIODE BREAKDOWN

A review of manufacturing technologies for silicon carbide superjunction devices被引量：1: 《Journal of Semiconductors》2021年第6期19-24,共6页Run Tian Chao Ma Jingmin Wu Zhiyu Guo Xiang Yang Zhongchao Fan; supported by the National Key Research and Development Program(No.2016YFB0400500);the Key Research and Development Projects in Guangdong Province(No.2019B010144001)。; Superjunction technology is believed to reach the optimal specific on-resistance and breakdown voltage trade-off.It has become a mainstream technology in silicon high-voltage metal oxide semiconductor field effect tra...; 关键词：silicon carbide(SiC) power semiconductor devices superjunction(SJ) process development

Superjunction nanoscale partially narrow mesa IGBT towards superior performance: 《Chinese Physics B》2017年第3期582-587,共6页喻巧群陆江刘海南罗家俊李博王立新韩郑生; Project supported by the National Natural Science Foundation of China(Grant No.61404161); We present a detailed study of a superjunction （S J） nanoscale partially narrow mesa （PNM） insulated gate bipolar transistor （IGBT） structure. This structure is created by combining the nanoscale PNM structure a...; 关键词：insulated gate bipolar transistor （IGBT） partially narrow mesa （PNM） superjunction （S J） turn-offloss

A superjunction structure using high-k insulator for power devices:theory and optimization: 《Journal of Semiconductors》2016年第6期116-121,共6页黄铭敏陈星弼; supported by the National Natural Science Foundation of China(No.51237001); A superjunction（SJ） structure using a high-k（Hk） insulator is studied and optimized by using an analytic model.Results by using the proposed model match well with that of numerical calculations.Numerical calculati...; 关键词：high-k（Hk） superjunction MOSFET specific on-resistance charge imbalance

A novel high performance TFS SJ IGBT with a buried oxide layer被引量：2: 《Chinese Physics B》2014年第8期625-630,共6页张金平李泽宏张波李肇基; Project supported by the National Science and Technology Major Project,China(Grant No.2011ZX02504-003);the Fundamental Research Funds for the Central Universities(Grant No.ZYGX2011J024);the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices,China(Grant No.KFJJ201301); A novel high performance trench field stop （TFS） superjunction （S J） insulated gate bipolar transistor （IGBT） with a buried oxide （BO） layer is proposed in this paper. The BO layer inserted between the P-base ...; 关键词：insulated gate bipolar transistor trench field stop SUPERJUNCTION buried oxide layer

A trench accumulation layer controlled insulated gate bipolar transistor with a semi-SJ structure: 《Journal of Semiconductors》2013年第12期30-33,共4页李冰华江兴川李志贵林信南; Project supported by the Guangdong Science&Technology Project(No.2010B090400443);the Shenzhen Science&Technology Foundation(Nos.JC201005270276A,ZD201006110039A);the Longgang Science&Technology Developing Foundation; A high performance trench insulated gate bipolar transistor which combines a semi-superjunction struc- ture and an accumulation channel （sSJTAC-IGBT） is proposed for the first time. Compared with the TAC-IGBT, the n...; 关键词：accumulation channel semi-superjunction structure BV SCSOA

SUPERJUNCTION