Review of Technologies for High-Voltage Integrated Circuits  

作　　者：Bo Zhang Wentong Zhang Le Zhu Jian Zu Ming Qiao Zhaoji Li 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,and School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China

出　　处：《Tsinghua Science and Technology》2022年第3期495-511,共17页清华大学学报（自然科学版（英文版）

摘　　要：High-Voltage power Integrated Circuits(HVICs) are widely used to realize high-efficiency power conversions(e.g., AC/DC conversion), gate drivers for power devices and LED lighting, and so on. The Bipolar-CMOS-DMOS(BCD) process is proposed to fabricate devices with bipolar, CMOS, and DMOS modes, and thereby realize the single-chip integration of HVICs. The basic integrated technologies of HVICs include High-Voltage(HV) integrated device technology, HV interconnection technology, and isolation technology. The HV integrated device is the core of HVICs. The basic requirements of the HV integrated device are high breakdown voltage, low specific on-resistance,and process compatibility with low-voltage circuits. The REduced SURFace field(RESURF) technology and junction termination technology are developed to optimize the surface field of integration power devices and breakdown voltage. Furthermore, the ENhanced DIelectric layer Field(ENDIF) and REduced BULk Field(REBULF) technologies are proposed to optimize bulk fields. The double/triple RESURF technologies are further developed, and the superjunction concept is introduced to integrated power devices and to reduce the specific on-resistance. This work presents a comprehensive review of these technologies, including the innovation technologies of the authors’ group,such as ENDIF and REBULF, substrate termination technology prospective integrated technologies and HVICs in wide band gap semiconductor materials are also discussed.

关 键 词：High-Voltage ICs(HVICs) high-voltage integrated technology Bipolar-CMOS-DMOS(BCD)process integrated power semiconductor devices SUPERJUNCTION 

分 类 号：TN40[电子电信—微电子学与固体电子学]