Superjunction 4H-SiC trench-gate IGBT with an integrated clamping PN diode  

作　　者：Huang Yi Wang Xuecheng Gao Sheng Liu Bin Zhang Hongsheng Han Genquan 

机构地区：[1]School of Optoelectronic Engineering,Chongqing University of Posts and Telecommunications,Chongqing 400065,China [2]School of Electronic Science and Engineering,Nanjing University,Nanjing 210008,China [3]School of Microelectronics,Xidian University,Xi'an 710126,China

出　　处：《The Journal of China Universities of Posts and Telecommunications》2024年第2期3-9,27,共8页中国邮电高校学报（英文版）

基　　金：the General Program of National Natural Science Foundation of Chongqing(CSTB2023NSCQ-MSX0475);the Doctoral Research Start-up Fund of Chongqing University of Posts and Telecommunications(A2023-7);the Technology Innovation and Application Demonstration Key Project of Chongqing Municipality(cstc2019jszx-zdztzxX0005,cstc2020jscx-gksbX0011)。

摘　　要：In this paper,a novel superjunction 4H-silicon carbide(4H-SiC)trench-gate insulated-gate bipolar transistor(IGBT)featuring an integrated clamping PN diode between the P-shield and emitter(TSD-IGBT)is designed and theoretically studied.The heavily doping superjunction layer contributes to a low specific on-resistance,excellent electric field distribution,and quasi-unipolar drift current.The anode of the clamping diode is in floating contact with the P-shield.In the on-state,the potential of the P-shield is raised to the turn-on voltage of the clamping diode,which prevents the hole extraction below the N-type carrier storage layer(NCSL).Additionally,during the turn-off transient,once the clamping diode is turned on,it also promotes an additional hole extraction path.Furthermore,the potential dropped at the semiconductor near the trench-gate oxide is effectively reduced in the off-state.

关 键 词：4H-silicon carbide(4H-SiC) trench-gate SUPERJUNCTION clamping diode 

分 类 号：TN322.8[电子电信—物理电子学]