Analysis of junction temperatures in high-power GaN-based LEDs  

作　　者：JIANG YuXuan1, LI Zheng1, SUN YongJian1, YU TongJun1, CHEN ZhiZhong1, ZHANG GuoYi1, ZHANG GuangChen2 & FENG ShiWei2 1 State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China 2 School of Electronic Information & Control Engineering, Beijing University of Technology, Beijing 100124, China 

出　　处：《Science China(Technological Sciences)》2010年第2期297-300,共4页中国科学（技术科学英文版）

基　　金：supported by the Natural Science Foundation of China, the Principal’s Fund of Peking University (Grant No. 60676032);the National Found for Fostering Talents of Basic Science (Grant No. NFFTBSJ0630311)

摘　　要：We presented the analysis of the incomplete conduction in bonding medium in high power GaN-based light-emitting diode (LED) packages. A numerical study was carried out with parametric model to understand the junction temperature variation due to bonding medium defects. Transient thermal measurement was performed to evaluate LED’s junction temperature. Thermal resistance from chip to lead frame was 20 K/W in our sample LED. It was suggested that only 60% of the surface area of the bonding medium was involved in the thermal conduction. This result was also supported by the SEM image. Blocking of thermal path induced by ineffective area of the bonding medium was regarded as a factor of its thermal resistance. Thus, the effective area of the bonding medium should be included in the FEM model and considered as another important factor in high power LED’s thermal management.We presented the analysis of the incomplete conduction in bonding medium in high power GaN-based light-emitting diode (LED) packages. A numerical study was carried out with parametric model to understand the junction temperature variation due to bonding medium defects. Transient thermal measurement was performed to evaluate LED’s junction temperature. Thermal resistance from chip to lead frame was 20 K/W in our sample LED. It was suggested that only 60% of the surface area of the bonding medium was involved in the thermal conduction. This result was also supported by the SEM image. Blocking of thermal path induced by ineffective area of the bonding medium was regarded as a factor of its thermal resistance. Thus, the effective area of the bonding medium should be included in the FEM model and considered as another important factor in high power LED’s thermal management.

关 键 词：JUNCTION temperature BONDING MEDIUM FEM simulation EFFECTIVE area 

分 类 号：TN312.8[电子电信—物理电子学]