Strain distribution and electronic structures of the InAs/GaAs quantum ring molecule in an applied electric field  

Strain distribution and electronic structures of the InAs/GaAs quantum ring molecule in an applied electric field

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作  者:JIA BoYong,YU ZhongYuan,LIU YuMin,YAO WenJie,YE Han & FENG Hao Key Laboratory of Information Photonics and Optical Communications(Beijing University of Posts and Telecommunications),Ministry of Education,Beijing 100876,China 

出  处:《Science China(Physics,Mechanics & Astronomy)》2010年第9期1594-1599,共6页中国科学:物理学、力学、天文学(英文版)

基  金:supported by the National High Technology Research and Development Program of China (Grant No 2009AA03Z405);the National Natural Science Foundation of China (Grant Nos 60908028 and 60971068);the High School Innovation and Introducing Talent Project of China (Grant No B07005)

摘  要:The strain distribution and electronic structures of the InAs/GaAs quantum ring molecule are calculated via the finite element method.In our model,three identical InAs quantum rings are aligned vertically and embedded in the cubic GaAs barrier.Considering the band edge modification induced by the strain,the electronic ground state and the dependence of ground state energy on geometric parameters of the quantum ring molecule are investigated.The change of localization of the wavefunction resulting from the applied electric field along the growth direction is observed.The ground state energy decreases as the electric field intensity increases in a parabolic-like mode.The electric field changes the monotonic dependence of the energy level on the inter-ring distance into a non-monotonic one.However,the electric field has no effect on the relationships between the energy level and other geometric parameters such as the inner radius and outer radius.The strain distribution and electronic structures of the InAs/GaAs quantum ring molecule are calculated via the finite element method.In our model,three identical InAs quantum rings are aligned vertically and embedded in the cubic GaAs barrier.Considering the band edge modification induced by the strain,the electronic ground state and the dependence of ground state energy on geometric parameters of the quantum ring molecule are investigated.The change of localization of the wavefunction resulting from the applied electric field along the growth direction is observed.The ground state energy decreases as the electric field intensity increases in a parabolic-like mode.The electric field changes the monotonic dependence of the energy level on the inter-ring distance into a non-monotonic one.However,the electric field has no effect on the relationships between the energy level and other geometric parameters such as the inner radius and outer radius.

关 键 词:STRAIN distribution electronic structure QUANTUM RING MOLECULE applied electric field 

分 类 号:O472.4[理学—半导体物理]

 

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