Nonvolatile WORM memory devices based on polymethacrylate with azoanthraquinone group  被引量:1

Nonvolatile WORM memory devices based on polymethacrylate with azoanthraquinone group

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作  者:Li, Hua  Lu, Jian Mei  Li, Na Jun  Xu, Qing Feng  Ge, Jian Feng  Wang, Li Hua  Luan, Zhao Chang 

机构地区:[1] Key Laboratory of Organic Synthesis of Jiangsu Province, College of Chemistry, Chemical Engineering and Materials Science, Suzhou University, Suzhou 215123, China

出  处:《Science China Chemistry》2010年第3期587-592,共6页中国科学(化学英文版)

基  金:support from the National Natural Science Foundation of China (Grant Nos 20571054 & 20876101);the Project of Jiangsu Province (Grant No BE2008061)

摘  要:A novel polymethacrylate containing azoanthraquinone chromophore in the side chain(PMAzoaq6) was synthesized and characterized.An electronic memory device having the indium-tin oxide(ITO)/PMAzoaq6/Al sandwich structure was fabricated and its electrical bistability was investigated.The as-fabricated device was initially found to be at the OFF state and the switching threshold voltage was 1.5 V.After undergoing the OFF-to-ON transition,the device maintains the high conducting state(ON state) even after turning off the electrical power and applying a reverse bias.The device exhibits a write-once-read-many-times(WORM) memory effect with a high ON/OFF current ratio of up to 105 and a long retention time in both ON and OFF states,which demonstrated that the synthetic azoanthraquinone-containing polymer possesses a high potential to become polymeric memory devices.A novel polymethacrylate containing azoanthraquinone chromophore in the side chain(PMAzoaq6) was synthesized and characterized.An electronic memory device having the indium-tin oxide(ITO)/PMAzoaq6/Al sandwich structure was fabricated and its electrical bistability was investigated.The as-fabricated device was initially found to be at the OFF state and the switching threshold voltage was 1.5 V.After undergoing the OFF-to-ON transition,the device maintains the high conducting state(ON state) even after turning off the electrical power and applying a reverse bias.The device exhibits a write-once-read-many-times(WORM) memory effect with a high ON/OFF current ratio of up to 105 and a long retention time in both ON and OFF states,which demonstrated that the synthetic azoanthraquinone-containing polymer possesses a high potential to become polymeric memory devices.

关 键 词:WORM polymer MEMORY AZO ANTHRAQUINONE 

分 类 号:O6[理学—化学]

 

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