Aluminum Nitride Films Fabricated by Mid-frequency Magnetron Sputtering  

作　　者：ZHONG Zhiqin, WANG Zhenzhong, YANG Jie, DAI Liping, WANG Shuya, ZHANG Guojun (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, CHN) 

出　　处：《Semiconductor Photonics and Technology》2010年第4期127-131,共5页半导体光子学与技术（英文版）

摘　　要：Aluminum nitride films were prepared by mid-frequency magnetron sputtering on Si (111) substrate. The grown films were characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM) and X-ray photoelectron spectroscopy(XPS) to obtain the structural and the chemical information. The polycrystalline thin films were in a hexagonal wurtzite structure having a (002) preferred orientation, along which the columnar grain structure was found. XPS study revealed the presence of oxygen and carbon contaminations, as well as the Al-rich nature of the film. Anomalous C-V characteristics of Al/AlN/n-Si capacitors were studied. The measured C-V curves show rolloffs in the accumulation region and voltage stresses cause both horizontal and vertical shifts of the C-V curves. These anomalous behaviors are mainly due to the large current conduction and the charge trapping in the Al-rich AlN layer.Aluminum nitride films were prepared by mid-frequency magnetron sputtering on Si (111) substrate. The grown films were characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM) and X-ray photoelectron spectroscopy(XPS) to obtain the structural and the chemical information. The polycrystalline thin films were in a hexagonal wurtzite structure having a (002) preferred orientation, along which the columnar grain structure was found. XPS study revealed the presence of oxygen and carbon contaminations, as well as the Al-rich nature of the film. Anomalous C-V characteristics of Al/AlN/n-Si capacitors were studied. The measured C-V curves show rolloffs in the accumulation region and voltage stresses cause both horizontal and vertical shifts of the C-V curves. These anomalous behaviors are mainly due to the large current conduction and the charge trapping in the Al-rich AlN layer.

关 键 词：ALN film XRD SEM XPS C-V CHARACTERISTIC 

分 类 号：TN3[电子电信—物理电子学]