定向凝固制备多晶硅柱状晶的研究(英文)  

Columnar Crystals of Multi-crystalline Silicon in Directional Solidification

作　　者：梅向阳[1] 马文会[1] 魏奎先[1] 杨斌[1] 戴永年[1] 

机构地区：[1]昆明理工大学材料与冶金工程学院∥真空冶金国家工程实验室,云南昆明650093

出　　处：《中山大学学报（自然科学版）》2009年第S2期89-91,共3页Acta Scientiarum Naturalium Universitatis Sunyatseni

基　　金：国家自然科学基金资助项目(50674050);教育部博士点基金资助项目(20060674004)

摘　　要：为了控制定向凝固过程中柱状晶的稳定生长,结合真空定向凝固技术,在一定的工艺参数下,利用真空定向凝固设备成功制备出具有单向凝固组织的多晶硅材料,通过对制备的多晶硅锭从纵截面和不同位置横截面的微观组织进行研究,分析得出了定向凝固过程中多晶硅垂直于底部的柱状晶和大晶粒形成的最佳工艺参数,通过X射线衍射检测,显示晶体择优取向为<111>面,文章还利用晶粒淘汰机制和柱状晶合并机制合理解释柱状晶体长大过程。Directional solidification was used to continuously grow columnar crystals.The system combined vacuum induction melting and directional solidification.The multi-crystalline silicon material was grown as unidirectional crystal using the vacuum directional solidification furnace.The microstructure of samples from lengthways section and cross-section of different position were studied to analyze and educe the optimal columnar crystals and big grain manufacture process.X-ray diffraction(XRD) pattern shows that multi-crystalline silicon mainly grew along <111> orientation.In this paper the experimentation conclusion was reasonably explained by the crystal elimination rule and the columnar crystals merge mechanism.

关 键 词：多晶硅 定向凝固 柱状晶体 

分 类 号：TG111.4[金属学及工艺—物理冶金]