氧气氛退火对TiO_2薄膜结构和成分的影响  

Effect of Annealing in Oxygen Atmosphere on Structure and Composition of TiO_2 Films

作　　者：赵利利[1] 伍登学[1] 刘成士[1] 廖志君[1] 卢铁城[1,2] 

机构地区：[1]四川大学辐射物理与技术国家教育部重点实验室,成都610064 [2]中国科学院国际材料中心,沈阳110015

出　　处：《人工晶体学报》2009年第S1期17-20,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金委员会"重点学术期刊专项基金"(No.50131010);总装预研基金(JG2006047)资助

摘　　要：采用电子束蒸发在硅衬底上制备TiO2薄膜,并在氧气氛下进行退火处理。分别使用X射线衍射仪和椭圆偏振仪分析退火前后以及不同退火温度下薄膜样品的结构、成分和折射率,研究氧气氛下进行退火对薄膜结构、成分和折射率的影响。结果表明:氧气氛下退火能够有效地改善薄膜缺氧的问题,提高TiO2薄膜的质量。TiO2 films were prepared on silicon substrate by electron beam evaporation,and then annealed in O2 atmosphere.The structures,composition and refractive index of TiO2 films as-deposited and annealed at different temperature in O2 atmosphere were studied with XRD and ellipsometry respectively.The effect of annealing in O2 atmosphere on the structures,composition and refractive index of TiO2 films were also studied.The results show that annealing in O2 atmosphere can resolve efficiently anoxic problem and improve the quality of the TiO2 films prepared by electron beam evaporation.

关 键 词：TIO2薄膜 电子束蒸发 氧气氛退火 

分 类 号：O484.5[理学—固体物理]