单晶Si_3N_4纳米带可控Al掺杂研究  

Study on Controlled Al-doped Single-crystalline Si_3N_4 Nanobelts

作　　者：高凤梅[1] 尉国栋[1] 王华涛[2] 谢志鹏[2] 张立功[3] 范翊[3] 罗劲松[3] 安立楠 杨为佑[1] 

机构地区：[1]宁波工程学院材料所,宁波315016 [2]清华大学材料系新型陶瓷与精细工艺国家重点实验室,北京100081 [3]中国科学院激发态物理重点实验室,长春130033 [4]Advanced Materials Processing and Analysis Center,University of Central Florida,orlandousa32826

出　　处：《人工晶体学报》2009年第S1期181-185,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.50872058);宁波市国际合作项目(No.2008B10044);宁波市自然科学基金(No.2009A610035)

摘　　要：采用有机前驱体热解法制备了Al掺杂的单晶Si3N4纳米带,并实现了单晶纳米带Al掺杂浓度的调控。采用SEM、XRD、TEM和HRTEM等对所合成的Al掺杂单晶Si3N4纳米带进行了系统分析和表征。纳米带平均厚度约为几十纳米,平均宽度为几百纳米,具有完整的晶体结构,生长方向为[011],固-液-气-固(SLGS)生长机理。对Al掺杂的纳米带的光学性能进行了初步检测。结果表明:Al掺杂对单晶Si3N4纳米带的光学性能具有显著的影响,通过调节Al掺杂浓度,可以成功实现对纳米带光学性能的调控。Controlled Al doped Si3N4 single-crystal nanobelts were synthesized by catalyst-assisted pyrolysis of polymeric precursors.The Al-doping levels can be tailored by varying the Al concentration in the polymeric precursors.The as-synthesized nanobelts were characterized by SEM,XRD,EDS,TEM and HRTEM.The single-crystal belts had perfect crystal structures with few defects such as dislocations and stacking faults.The nanobelts obtained are several tens nanometers in thickness,several hundreds nanometers in width.The growth direction of the Al doped α-Si3N4 nanobelts was\.The growth mechanisms of α-Si3N4 nanobelts were proposed to be solid-liquid-gas-sold(SLGS).The optical properties of Al doping Si3N4 nanobelts were measured.Current results suggested that the optical properties of the nanomaterials can be controlled by adjusting Al doping contents.

关 键 词：有机前驱体 热解 氮化硅 纳米带 掺杂 

分 类 号：TB383.1[一般工业技术—材料科学与工程]