水热合成Zn_(0.9)Ni_(0.1)O稀磁半导体粉体  

Preparation of Zn_(0.9)Ni_(0.1)O Diluted Magnetic Semiconductor by Hydrothermal Method

作　　者：李慧勤[1,2] 苗鸿雁[1] 谈国强[1] 安百江 夏傲[1] 

机构地区：[1]陕西科技大学材料科学与工程学院,西安710021 [2]宝鸡文理学院化学化工系,宝鸡721013 [3]陕西宝光真空电器股份有限公司,宝鸡721304

出　　处：《人工晶体学报》2009年第S1期279-282,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.5067205550872077);国家科技支撑计划资助项目(2006BAF02A28);陕西科技大学研究生创新基金

摘　　要：采用水热法,以3 mol/L的KOH作为矿化剂,在260℃下,保温24 h左右,进行Ni掺杂(x=0.1 mol),合成Zn1-xNixO稀磁半导体晶体。XRD测试表征以KOH作为矿化剂能够制备出发育良好的Zn0.9Ni0.1O稀磁半导体晶体,没有其它杂质相的产生。通过UV/Vis测试进一步说明掺杂的效果,掺杂使ZnO的禁带宽度降低至3.18 eV。FE-SEM测试显示所制备的晶体呈现长柱状。VSM测试表明,所制备的样品Zn0.9Ni0.1O在室温下表现出铁磁性。文章采用水热法制备出了具有铁磁性能的稀磁半导体粉体。Zn1-xNixO diluted magnetic semiconductor was prepared by hydrothermal method at 260 ℃ for about 24 h with KOH of 3 mol/L.X-ray diffraction measurements indicates that Zn0.9Ni0.1O nanocrystalline could be prepared with KOH of 3 mol/L and the as-prepared Zn0.9Ni0.1O has the pure ZnO wurtzite structure.And UV/Vis are employed to demonstrate the presence of Ni ions in substitution of Zn sites reducing Eg of ZnO,Eg=3.18 eV.FE-SEM shows that the shape of crystals is long column.Room temperature VSM reveals a ferromagnetic behavior of the Ni-doped ZnO samples and its repeatability is very good.

关 键 词：稀磁半导体 Zn1-xNixO 水热法 铁磁性 

分 类 号：TN304[电子电信—物理电子学]