脉冲偏压及退火处理对电弧离子镀N掺杂TiO_2薄膜结构和性能的影响  

Effect of Pulsed Bias and Post-annealing on Structure and Performance of N-doped TiO_2 Films Deposited by Arc Ion Plating

作　　者：张淑娟[1] 黎响[1] 陈文亮[1] 欧炳蔚 李明升[1] 

机构地区：[1]江西科技师范学院江西省材料表面工程重点实验室,南昌330013

出　　处：《人工晶体学报》2009年第S1期335-338,共4页Journal of Synthetic Crystals

基　　金：江西省自然科学基金项目(No.GJJ08365)

摘　　要：本文利用电弧离子镀技术,施加不同脉冲偏压,在玻璃基体上沉积了N掺杂TiO2薄膜。研究了基体偏压和热处理对薄膜结构、光吸收性能及光催化降解甲基橙的反应活性。结果表明:随脉冲偏压的提高,薄膜相结构先由锐钛矿向非晶转变然后向锐钛矿和金红石的混合相转变,吸收边先红移后蓝移,透明度先下降后升高。400℃下退火4 h,薄膜结晶形貌更加明显,吸收边进一步红移,透明度提高。原始薄膜和退火后的薄膜都具有高的紫外光催化活性。可见光下经过退火的-300V偏压下制备的薄膜具有最好的光催化活性。N-doped TiO2 films were deposited by arc ion plating method with different pulsed bias and then were annealed at 400 ℃ for 4 h in air.The effect of substrate bais and heat treatment on microstructure,photo absorption performance and photocatalytic degradation of methyl orange were investigated.The results indicated that as the pulsed bias increasing,the phase structure of the as-deposited films changed from anatase to amorphous and then to mixture of anatase and rutile,the band edges of the films moved towards to visible-light region,and the transmittance of the films first decreased slightly and then increased obviously.Post-annealing extend the band edges of the N-doped TiO2 films to a longer wavelength region and increased the transmittance of the films.The doping of N into TiO2,the application of pulsed bias and the post-annealing hardly changed the catalytic activity of the films in UV light,but improved the catalytic activity in visible light to some extent.

关 键 词：电弧离子镀 N掺杂TIO2 脉冲偏压 退火处理 结构和性能 

分 类 号：TB43[一般工业技术]