负偏压对PET上磁控溅射氧化铝薄膜的影响  

Bias Voltages and Growth of Sputtered Al_2O_3 Films on Polythylene Terephthalate Substrates

作　　者：林晶[1,2] 刘壮[1] 孙智慧[1] 高德[1] 

机构地区：[1]哈尔滨商业大学,哈尔滨150028 [2]印刷包装材料与技术北京市重点实验室,北京102600

出　　处：《真空科学与技术学报》2009年第S1期91-93,共3页Chinese Journal of Vacuum Science and Technology

基　　金："十一五"国家科技支撑计划"食品加工关键技术研究与产业化开发"项目;"食品包装新材料研究与开发"课题资助(No.2006BAD05A05);印刷包装材料与技术北京市重点实验室开放课题(No.KF200705)

摘　　要：以PET(对苯二甲酸已二醇脂)为基体,采用磁控溅射方法在其上制备Al_2O_3阻隔膜,研究负偏压对基体温度、镀膜表面形貌和镀膜化学成份的影响。研究表明,基体温度随着负偏压的增加而升高;Al_2O_3薄膜的表面形貌随着负偏压的增加粗糙度显著降低。XPS分析表明薄膜是满足化学成分配比的Al_2O_3,而且薄膜的成分在较大的负偏压的范围内保持稳定;适当的负偏压有利于提高薄膜的阻隔性。The Al_2O_3 films were grown by DC magnetron sputtering on polythylene terephthalate(PET)substrates. The microstructures and electronic properties of the Al_2O_3 films were characterized with atomic force microscopy(AFM) and X-ray photoelectron spectroscopy(XPS).The influence of film growth conditions on film quality was studied.The results show that the bias affects the substrate temperature and properties of the Al_2O_3 films to a varying degree.For example, as the bias voltage increases,the substrate temperature slightly rises up and the surface roughness decreases.Besides, a high suitable bias favors stable stoichiometry of Al_2O_3,and an optimized bias improves the oxygen transition rate(OTR) of the films.Possible mechanisms were tentatively discussed.

关 键 词：负偏压 磁控溅射 Al₂O₃薄膜 

分 类 号：TB484[一般工业技术—包装工程]