Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile  

作　　者：HSIAO Ling 

机构地区：[1]Academy of Mathematics and Systems Science, Chinese Acadamy of Sciences

出　　处：《Science China Mathematics》2008年第9期1619-1630,共12页中国科学：数学（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant Nos. 10431060, 10701011,10771009);Beijing Science Foundation of China (Grant No. 1082001)

摘　　要：The quasi-neutral limit of time-dependent drift diffusion model with general sign-changing doping profile is justified rigorously in super-norm (i.e., uniformly in space). This improves the spatial square norm limit by Wang, Xin and Markowich.The quasi-neutral limit of time-dependent drift diffusion model with general sign-changing doping profile is justified rigorously in super-norm (i.e., uniformly in space). This improves the spatial square norm limit by Wang, Xin and Markowich.

关 键 词：quasi-neutral limit drift-diffusion equations multiple scaling asymptotic expansions 35B25 35B40 35K57 

分 类 号：O474[理学—半导体物理]