功率PHEMT器件大信号建模  

Power PHEMT Device Large-Signal Modeling

作　　者：刘军[1] 孙玲玲[1] 吴颜明[1] 

机构地区：[1]杭州电子科技大学射频电路与系统教育部重点实验室,杭州310037

出　　处：《半导体技术》2008年第S1期15-20,共6页Semiconductor Technology

基　　金：GaAs微波毫米波单片和模块电路国家重点实验室(9140C1402030803)

摘　　要：提出一种新的、可同时适用于GaAs、GaN基PHEMT/HEMT/HFET器件大/小信号等效电路模型。沟道电流模型方程连续、可导,可精确拟合实际器件正、反向区、截止区以及亚阈值区特性,且漏导精确,主结构跨导至少可精确拟合至3阶。电荷方程在实现连续、高阶可导且导数精确的基础上,满足电荷守恒规律。模型综合考虑了器件弱雪崩击穿以及热效应特性,对器件跨导频率分布效应也作了灵活的考虑。模型以Verilog-A语言描述,并开发为DesignKit形式嵌入ADS2005A中。给出了对一GaAs基PHEMT器件建模结果,从大/小信号测量和仿真对比结果来看,模型已有较好精度,可供实用。A novel large and small signal equivalent circuit model for GaAs and GaN based PHEMT/HEMT/HFET devices was presented.The channel current model equations are derivable and continuous and can fit the positive,negative and cut-off region accurately.The modeled drain-conductance is also precise.The main model transconductance can be accurately fit to 3rd order.The charge equations can satisfy the charge conservation law on the basis of continuous,high-order derivable and accurate derivatives.The frequency distribution of the transconductance of the device were taken into account properly as well as the weak avalanche effect and self-hea-ting effect.This model was described in Verilog-A and embedded into ADS2005A in the form of DesignKit.The model results based on a GaAs device was presented.It can be seen from the comparison of measured and simulated results,the model has high precision and suitable for practical application.

关 键 词：GaAs/GaN PHEMT/HEMT/HFET 大/小信号 模型 VERILOG-A ADS2005A 

分 类 号：TN386[电子电信—物理电子学]