MOCVD ZnO缓冲层生长与退火研究  

Effect of Growth and Annealing on ZnO Buffer by MOCVD

作　　者：朱光耀[1] 顾书林[1] 朱顺明[1] 

机构地区：[1]南京大学物理系固体微结构物理国家重点实验室,南京210093

出　　处：《半导体技术》2008年第S1期337-340,共4页Semiconductor Technology

基　　金：国家自然科学基金(60776013;60576017;50532100);国家"973"重点基础研究项目(2006CB92183);国家"863"高技术研究发展计划(2007AA032404)

摘　　要：采用MOCVD技术在蓝宝石基底上生长ZnO缓冲层,利用X射线衍射和原子力显微镜技术研究了生长温度和退火温度对缓冲层质量及表面形貌的影响。结果表明,低温生长时,生长温度的提高有利于增强反应物原子的扩散能力,降低表面粗糙度,从三维岛状生长模式转变为准二维层状生长模式。研究发现,高温退火时氧气气氛下900℃是较合适的退火温度,可以最大限度地激活原子使之移动到合适的晶格位置,有利于晶体择优取向生长,而更高的温度将导致ZnO的分解,从而大大降低晶体质量。ZnO buffers was grown on sapphire substrates by MOCVD method,the crystal quality and the surface property were investigated by X-ray diffraction(XRD)and atomic force microscope(AFM).It's found that in the low-temperature growing process,high temperature may cause reactant atoms get more energy to diffuse on the surface of the substrates,resulting in a transition from 3-D growth mode to quasi-2D growth mode and leads to a decrease in root-mean-square roughness(RMS).In the high-temperature annealing process,the rising temperature will drive the surface atoms to proper positions to improve the crystal structures,but may also cause the decomposition of ZnO buffers.The experiment results show that 900 ℃ annealing temperature and oxygen ambience may help to improve the surface morphorogy and crystal structure property of ZnO buffer layers.

关 键 词：氧化锌 金属有机物化学气相淀积 缓冲层 表面形貌 晶体质量 

分 类 号：TN304.055[电子电信—物理电子学]