p型N掺杂ZnO薄膜的MOCVD生长与电学性质  

Growth and Electric Characteristics of p-Type N-Doped ZnO Film by Metal-Organic Chemical Vapor Deposition

作　　者：汤琨[1] 顾书林[1] 朱顺明[1] 

机构地区：[1]南京大学物理系南京微结构国家实验室,南京210093

出　　处：《半导体技术》2008年第S1期341-344,共4页Semiconductor Technology

基　　金：国家自然科学基金(60776013;60576017;50532100);国家"973"项目基金(2006CB921803);国家"863"项目基金(2007AA03Z404)

摘　　要：通过采用O2与N2O按照一定的流量比作为反应气源,利用MOCVD方法实现了较低电阻率的N掺杂ZnO薄膜。实验分别研究了改变O2与N2O流量比和改变衬底温度对于薄膜电学性质的影响,并利用Raman光谱与Hall测试结果的比较分析了MOCVD系统中非故意掺杂碳元素及其相关杂质对薄膜的作用。实验结果和讨论为解决ZnO的p型掺杂难题提供了一条途径。The relative low-resistance nitrogen-doped ZnO thin film was realized by metal-organic chemical vapor deposition through modifying the ratio of O2 and N2O,and put them together into the reaction chamber.The influence of changing the ratio of O2 and N2O and the substrate temperature to the electric characteristics of the thin film were investigated.Then comparison of Raman and Hall were used to analyze the effect of the unintentional impurity carbon which usually exists in MOCVD fabricated films.The results and discussions provide a route on solving the world-wide difficult problem of p-type doping in ZnO.

关 键 词：氧化锌 金属有机物化学气相沉积 P型 氮掺杂 

分 类 号：TN304.055[电子电信—物理电子学]