Ga和Mn共掺ZnO薄膜的结构和光学特性  

Structure and Optical Properties of (Ga,Mn) Co-Doped ZnO Films

作　　者：吴孔平[1] 顾书林[1] 朱顺明[1] 

机构地区：[1]南京大学物理系微结构国家实验室,南京210093

出　　处：《半导体技术》2008年第S1期345-348,共4页Semiconductor Technology

基　　金：国家自然科学基金(60776013;60576017;50532100);国家"973"项目基金(2006CB921803);国家"863"项目基金(2007AA03Z404)

摘　　要：研究了高质量的Ga、Mn共掺ZnO外延薄膜的电子结构和光学特性,这些薄膜通过MOCVD沉积在蓝宝石(0001)面上。结果显示单Mn掺杂时的样品呈现高阻p型,Ga和Mn共掺时呈现n型,而载流子浓度出现一个最大值,然后随着Ga的掺杂量增大而下降,反映了高浓度掺杂Ga会出现Ga代O位的补偿效应。光致发光谱(PL)带边和吸收谱发生红移,并且衍射峰向大角度偏移,可能Ga的掺杂会导致带隙变窄。应用第一性原理软件对Ga、Mn共掺的ZnO体系的电子结构进行理论计算,结果表明共掺杂样品相比单Mn掺杂的ZnO体现出了半金属特性。The structural,optical properties of high quality epitaxial Ga and Mn co-doped ZnO films were investigated.The films were deposited on(0001)sapphire substrate by MOCVD.The results show that the sample which only doped Mn presents p type with high resistance.The co-doped samples show a red shift at the band edge of PL and absorbance spectroscopy.Besides,once the dopant Ga introduced,there is a maximum for the electron concentration with certain Ga doped.It is probably attributed to compensating mechanism from Ga substituting for O sites.First principle theory calculation for(Ga,Mn)co-doped ZnO compared to that doped only Mn implies semimetal properties.

关 键 词：氧化锌 化合物半导体 稀磁半导体 半金属 

分 类 号：TN304[电子电信—物理电子学]