Zn_(1-x)Mg_xO合金的MOCVD生长及其紫外探测器的研究  

Zn_(1-x)Mg_xO MOCVD Growth and Its Application on Ultraviolet Detector

作　　者：单正平[1] 顾书林[1] 朱顺明[1] 

机构地区：[1]南京大学物理系固体微结构物理国家重点实验室,南京210093

出　　处：《半导体技术》2008年第S1期353-356,共4页Semiconductor Technology

基　　金：国家自然科学基金(60776013;60576017;50532100);国家"973"重点基础研究项目(2006CB921803);国家"863"高技术研究发展计划(2007AA03Z404)

摘　　要：以MOCVD系统生长Zn1-xMgxO合金,通过改变Mg、Zn气相比调制得到了不同组分含量的Zn1-xMgxO合金,其中Mg的固态含量从0变化到0.49,其对应的禁带宽度从3.31eV覆盖到5.02eV。以所生长的Zn1-xMgxO/蓝宝石为衬底,制备MSM结构的紫外探测器,在特定的偏压下,Ti/ZnO基紫外探测器在380nm具有最高响应度0.14A/W,Ni/Mg0.36Zn0.64O基深紫外探测器在327nm具有最高响应度1.9×10-4A/W,并且其在紫外波长的峰值响应度均比可见光450nm处的响应度高出两个数量级。Via changing the Mg/Zn ratio in vapor phase,Zn1-xMgxO alloy were deposited by MOCVD system.The band-gap Eg of Zn1-xMgxO can be modulated from 3.31 eV to 5.02 eV with x in solid varied from 0 to 0.49.MSM UV-detector was fabricated by using the MgxZn1-xO/sapphire sample,Ti/ZnO based MSM UV-detector with the highest responsibility of 0.14 A/W and Ni/Mg0.36Zn0.64O based MSM DUV-detector with the highest responsibility of 1.9×10-4 A/W at 327 nm were fabricated.The UV to visible(450 nm)rejection ratio of around two orders could be extracted from the spectra response.

关 键 词：MOCVD ZNMGO 紫外探测器 

分 类 号：TN304.055[电子电信—物理电子学]