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作 者:李新磊[1] 赵北君[1] 朱世富[1] 邱春丽[1] 王智贤[1] 丁群[1] 何知宇[1] 陈宝军[1]
出 处:《半导体技术》2008年第S1期376-378,382,共4页Semiconductor Technology
基 金:国家自然科学基金(60276030);教育部博士点基金(20020610023)
摘 要:采用改进的Bridgman法生长出Φ20mm×40mm、外表无裂纹的Cd0.8Zn0.2Te(CZT)单晶体。沿晶锭轴向每隔1.2cm取点,进行EDX、XRD测试。在EDX测试中发现Zn含量相对于理论值发生了偏离,随晶体生长过程呈现递减趋势,分析表明是由于Zn的分凝所引起。对XRD粉末衍射测试的结果进行结构分析,计算出上述不同位置的晶胞常数变化规律呈现递增趋势,表明Zn含量呈现递减趋势,与EDX实验结果一致。An integral CZT single crystal with the diameter of 20 mm and the length of 40 mm was grown by improved Bridgman method.Then three points of this crystal from the direction of the crystal axis every 1.2 cm were studied on the content of Zn component.According to the EDX analysis,it was proved that weight percent of Zn component in the crystal was different from theoretical values and presented a decreasing trend with the crystal growth direction,which indicated that the result was caused by the Zn segregation.The crystal lattice constants were calculated from XRD patterns,also displayed the increasing trend,which consisted with the result of EDX analysis.
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