InP晶体材料中的杂质  

Impurity in InP Crystal Material

作　　者：徐建成[1] 马中凡[1] 

机构地区：[1]首都师范大学物理系

出　　处：《首都师范大学学报（自然科学版）》1997年第S1期61-63,共3页Journal of Capital Normal University：Natural Science Edition

摘　　要：本文给出了ＩｎＰ材料（１００）和（１１１）晶面的质谱分析结果，并对（１００）晶面做了光荧光分析．In this paper,the physical properties of Indium phosphide material are discussed. The mass spectrographic analysis results for crystal face (100) and (111) in the InP are given. And the photoluminescence properties of Indium phosphide for crystal face (100) are investigated. Experimental results indicate that the contamination of silicon is predominant.

关 键 词：杂质 质谱分析 光荧光 

分 类 号：O474[理学—半导体物理]