Scanning Tunneling Spectroscopy Studies on Electronic Structures of GaAs(100) and Graphite Surfaces  

作　　者：李楠 郑幼风 傅春生 钱生法 解思深 

机构地区：[1]Institute of Physics, Academia Sinica, Beijing 100080, PRC

出　　处：《Chinese Science Bulletin》1994年第12期983-988,共6页

摘　　要：Study on the electronic structure of material surfaces is an important branch ofsolid surface physics. The scanning tunneling spectroscopy(STS) developed recentlybased on STM has shown specific advantages on the surface electronic structure re-search. The most attractive feature is that it can give spatially resolved surface densityof states in valence and conduction band of materials When combined with STM. This isvery important to studies of local electronic states around different atoms or

关 键 词：STS GaAs(100) GRAPHITE density of states in VALENCE and conduction bands. 

分 类 号：O472[理学—半导体物理]