MEASUREMENTS OF REFRACTIVE INDICES OF Ⅱ-Ⅵ WIDE GAP SEMICONDUCTOR STRAIN ED-LAYER SUPERLATTICES  

作　　者：崔捷 陈云良 王海龙 干福熹 

机构地区：[1]Shanghai Institute of Optics and Fine Mechanics, Academia Sinica, Shanghai 201800, PRC

出　　处：《Chinese Science Bulletin》1992年第6期461-463,共3页

摘　　要：I. INTRODUCTION The wide gap semiconductor superlattioes and quantum wells fabricated by ZnS, ZnSe and ZnTe are expected to be greatly useful in the optoelectronics area in the visible region. 600-700 nm wavelength optoelectronic devices with these structures have attracted much interest for the use in high-density optical information systems.

关 键 词：STRAINED-LAYER SUPERLATTICE refractive index 

分 类 号：N[自然科学总论]