STRAINED-LAYER

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Research and Design of Ge_(0.6)Si_(0.4)/Si Strained-layer Superlattice Planar Optical Waveguide被引量：1
《Semiconductor Photonics and Technology》2002年第1期19-21,共3页LIU Shu ping (Taiyuan Heavy Machinery Institute, Taiyuan 030024, CHN) 
Calculation shown that the refraction index of Ge_0.6Si_0.4/Sistrained-layer superlattice n≈3.64, when L_w=9 nm and L_b=24 nm. Analgorithm of numerical iteration for effective refraction index isemployed to obtain di...
关键词：Ge_0.6Si_0.4/Si SUPERLATTICE optical waveguide effective refractionindex 
Electronic Structures of Wurtzite Compounds GaN, AIN and Strained-Layer Superlattice (Ga_(2)N_(2))_(1)(Al_(2)N_(2))_(1)(001)
《Chinese Physics Letters》1993年第12期748-751,共4页KE Sanhuang HUANG Meichun WANG Renzhi 
The electronic structures of wurtzite compounds GaN,AIN and strained-layer super-lattice(SLS)(Ga_(2)N_(2))_(1)(Al_(2)N_(2))_(1)(001) constituted by straining GaN-layer to match the lattice constant of AIN according to...
关键词：GAN lattice layer 
TRANSIENT PHOTOLUMINESCENCE SPECTRA OF Ⅱ-Ⅵ WIDE GAP ZnSe/ZnS STRAINED-LAYER SUPERLATTICES
《Chinese Science Bulletin》1992年第20期1696-1699,共4页崔捷 王海龙 干福熹 黄旭光 蔡志岗 李庆行 余振新 
Ⅰ. INTRODUCTION The coulomb interaction between electron and hole has been enhanced in the quasi-two-dimensional (2D)electronic system in quantum well or superlattice structure, especially by the potential confinemen...
关键词：STRAINED-LAYER SUPERLATTICE LUMINESCENCE DUE to EXCITON recombination TIME-RESOLVED spectrum 
MEASUREMENTS OF REFRACTIVE INDICES OF Ⅱ-Ⅵ WIDE GAP SEMICONDUCTOR STRAIN ED-LAYER SUPERLATTICES
《Chinese Science Bulletin》1992年第6期461-463,共3页崔捷 陈云良 王海龙 干福熹 
I. INTRODUCTION The wide gap semiconductor superlattioes and quantum wells fabricated by ZnS, ZnSe and ZnTe are expected to be greatly useful in the optoelectronics area in the visible region. 600-700 nm wavelength op...
关键词：STRAINED-LAYER SUPERLATTICE refractive index 
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