Electronic Structures of Wurtzite Compounds GaN, AIN and Strained-Layer Superlattice (Ga_(2)N_(2))_(1)(Al_(2)N_(2))_(1)(001)  

作　　者：KE Sanhuang HUANG Meichun WANG Renzhi 

机构地区：[1]Department of Physics,Xiamen University,Xiamen 361005

出　　处：《Chinese Physics Letters》1993年第12期748-751,共4页中国物理快报（英文版）

摘　　要：The electronic structures of wurtzite compounds GaN,AIN and strained-layer super-lattice(SLS)(Ga_(2)N_(2))_(1)(Al_(2)N_(2))_(1)(001) constituted by straining GaN-layer to match the lattice constant of AIN according to the elastic theory are studied with the first-principles Linearized-MufRn-Tin-Orbitals band-structure method.The band ofFsets at the SLS are determined by the frozen potential approach.The resutls of the bulk materials are in good agreement with available experimental data.

关 键 词：GAN lattice layer 

分 类 号：TN3[电子电信—物理电子学]