c轴取向MOCVD-YBCO膜临界电流密度的角度效应  

ANGULAR DEPENDENCE OF THE CRITICAL CURRENT DENSITY OF THE c-AXIS ORIENTED MOCVD-YBCO FILM

作　　者：张宏[1] 陶卫[1] 吴鸿[1] 胡素辉[1] 

机构地区：[1]中国科学院上海冶金研究所,上海200050

出　　处：《低温物理学报》1992年第5期341-345,共5页Low Temperature Physical Letters

基　　金：国家自然科学基金;国家超导技术联合研究开发中心的资助

摘　　要：本工作测量了低压快速生长的 c 轴取向的 MOCVD-YBCO 膜(ab)面上临界电流密度随外磁场与(ab)面间夹角θ的变化.结果表明:在77.3K,临界电流密度对角度变化极为敏感,随磁场强度增加,临界电流密度的这种各向异性越为明显.在 V-I 曲线的低 V 区.V-I 曲线可用 V=AI^n 描述,n 值随角度θ的变化和临界电流密度的变化有一定对应性.Angular dependence of critical current density of the MOCVD film by rapid growth method was measured at 77.3K in magnetic field. It was shown that the critical current density in (ab) plane is strongly sensitive to the angle between the plane and magnetic field direction. This ani-sotropy becomes more obvious with raising the strength of magnetic field. Meanwhile the V-I relation in the low V region could be fitted in the power law V - Aln and n changes also with the angle as the critical current density.

关 键 词：临界电流密度 YBCO MOCVD 对应性 超导电 超导性能 传输电流 高温超导材料 超导氧化物 带材 

分 类 号：O4[理学—物理]