清洁砷化镓表面二次离子质谱及其与一次氩离子能量关系的研究  

A STUDY OF SECONDARY ION MASS SPECTRUM FROM CLEAN GALLIUM ARSENIDE SURFACES AND ITS DEPENDENCE UPON THE PRIMARY ARGON ION ENERGY

作　　者：林卫东 潘敏 童玉琴 黄杭军 姜志雄[1] 查良镇[1] 

机构地区：[1]清华大学电子工程系

出　　处：《真空科学与技术学报》1991年第1期23-27,60,共6页Chinese Journal of Vacuum Science and Technology

摘　　要：本文针对砷化镓材料中微量元素的定量分析进行了二次离子质谱的应用基础研究。对离子束清洗及超高真空下清洁砷化镓表面SIMS谱的获得进行了研究,讨论了谱的特征,研究了主要谱峰强度与一次氩离子能量的关系,还对可能出现的GaOH_x^+(X=0,1,…)原子团离子进行了实验研究和讨论,最后对国产GaAs材料的一些实验结果进行了简要的对比。In order to do quantitative analysis of trace elements in GaAs, some basic SIMS studieshave been done in this paper. The ion beam cleaning and the obtainment of SIMS spectrafrom clean GaAs surfaces under UHV have been studied. The characteristics of these spec-tra have been discussed. The relationship between the intensities of the main peaks andthe primary argon ion energy has been investigated. An interesting study and discussionhave also been given for the possible GaOHx^+ (x=0. 1,…) cluster ions. In addition, a briefreview on the quality of some domestic GaAs materials has been made.

关 键 词：能量关系 砷化镓 氩离子 谱峰 质谱学 基础研究 SIMS 微量杂质 产额 离子发射 

分 类 号：TB7-55[一般工业技术—真空技术]