CRYSTAL-GROWTH STRUCTURE OF SPUTTERED InP FILMS  

作　　者：黎锡强 

机构地区：[1]Ion Beam Laboratory, Shanghai Inatitute of Metallurgy, Academia Sinica, Shanghai 200050, PRC

出　　处：《Chinese Science Bulletin》1991年第7期613-614,共2页

摘　　要：The thermal instability of InP leads to the failure of vacuum deposition of this kind of compound films. Many results for the preparation of Ⅲ-Ⅴ compound films, such as GaAs, GaP and InAs, except InP by sputtering have been published in literature. For the first

关 键 词：SPUTTERING vacuum instability amorphous SAPPHIRE texture THETA dents AGAIN 

分 类 号：N[自然科学总论]