绝缘层上应变SiGe沟道p-MOSFET电学特性模拟分析  

Simulation analysis of electrical characteristics of strained SiGe channel-on-insulator p-MOSFET

作　　者：于杰[1] 王茺[1] 杨洲[1] 陈效双[2] 杨宇[1] 

机构地区：[1]云南大学光电信息材料研究所,云南昆明650091 [2]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处：《红外与毫米波学报》2013年第4期304-308,共5页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(10990103;11274266);教育部科学研究重点项目(210207);云南省自然基金重点项目(2008CC012)~~

摘　　要：利用数值模拟软件ISE TCAD对绝缘层上应变SiGe (SGOI)和Si (SOI) p-MOSFET的电学特性进行了二维数值模拟.计算结果表明,与传统的SOI p-MOSFET相比,SGOI p-MOSFET的漏源饱和电流几乎要高出两倍；其亚阈值电流要高出1～3个数量级.Ge合金组分作为应变SiGe沟道MOSFET的重要参数,就不同Ge合金组分对SGOI p-MOSFET的电学特性的影响也进行了较为深入的研究.随着Ge合金组分的增大,SGOI p-MOSFET的总体电学性能有所提高.The strained SiGe-on-Insulator (SGOI) p-MOSFET and Si-on-Insulator (SOI) p-MOSFET were studied via 2-D numerical simulation by ISE TCAD software, respectively. The results indicate that the drain-source saturation current of SGOI p-MOSFET is almost more than twice that of conventional SOI p-MOSFET. The sub-threshold current of SGOI p-MOSFET is 1~3 orders of magnitude higher than that of SOI p-MOSFET. Because Ge alloy mole fraction is an important parameter for the strained SiGe channel MOSFET, its effect on the electrical characteristics of the SGOI p-MOSFET was studied in detail. With the increasing of Ge alloy mole fraction, the overall electrical properties of SGOI p-MOSFET were improved.

关 键 词：SGOI P-MOSFET Ge合金组分 

分 类 号：TN386.1[电子电信—物理电子学]