基于低温共烧陶瓷技术的SIP工艺研究  

Research of SIP Process Using LTCC Technology

作　　者：徐自强[1] 张宝[1] 徐美娟[1] 廖家轩[1] 

机构地区：[1]电子科技大学,四川成都611731

出　　处：《稀有金属材料与工程》2013年第S1期68-71,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金资助(51172034;61201001);中央高校基本科研业务费资助(ZYGX2011J132)

摘　　要：系统集成封装技术(SIP)是将一个电子系统进行集成封装,而基于低温共烧陶瓷工艺(LTCC)的高密度基板技术是其中的关键。本文研究了收发(T/R)组件微波多层互连基板的制作工艺及其优化,基于LTCC工艺,制备出一种应用于X波段T/R组件的SIP基板,并着重对影响基板特性的信号孔和散热孔填充、通孔金属化、异质材料匹配工烧、内埋腔体技术和组装等关键技术进行了研究。获得了一套内埋置腔体LTCC多层互连基板的工艺参数,并已成功研制出满足T/R组件微波电路性能要求的LTCC多层互连基板。The 'system-in-package' (SIP) concept of integrating many or all electronic components of a functional system into one product has attracted considerable attention recently. The low-temperature co-fired ceramic (LTCC) technology is a very widely used multilayer technology for designing miniaturized SIP substrate, owing to its three-dimensional (3-D) integration capabilities, process tolerance, and low dielectric loss. SIP substrates using LTCC technology are widely applied in military, astronavigation, automobile, microwave and radio frequency communication. This paper deals with the manufacture and the process optimization of SIP substrate technology. A SIP substrate for X band T/R module has been designed and implemented. Meanwhile, key processes and difficulties of the SIP substrate technology, such as interconnect via filling technique, metallization of hole through connection, adjusting the co-fireability of different materials, embedding cavity and micro-assembly technology have also been discussed.

关 键 词：低温共烧陶瓷 多层 匹配共烧 微波互连 系统集成封装 

分 类 号：TN405[电子电信—微电子学与固体电子学]