沉积参数对磁控溅射沉积Ti-B-C薄膜力学性能的影响  

Effect of the Deposition Parameters on the Mechanical Properties of Ti-B-C Films Deposited by Magnetron Sputtering

作　　者：徐淑艳[1] 王立海[1] 肖生苓[1] 罗甸 唐光泽[2] 马欣新[2] 

机构地区：[1]东北林业大学,黑龙江哈尔滨150040 [2]哈尔滨工业大学,黑龙江哈尔滨150001

出　　处：《稀有金属材料与工程》2013年第S1期179-182,共4页Rare Metal Materials and Engineering

基　　金：高等学校博士学科点专项科研基金(20090062120005);中央高校基本科研业务费专项资金(DL12CB09)

摘　　要：采用Ti/B4C复合靶作为靶材,通过磁控溅射方法沉积了成分、结构可调的Ti-B-C薄膜。利用X射线光电子能谱(XPS)和X射线衍射(XRD)分析了Ti-B-C薄膜的成分和结构,利用纳米压痕法测量了Ti-B-C薄膜的力学性能。结果表明,励磁线圈电流改变会影响薄膜的成分和结构,沉积温度改变对薄膜的成分无明显影响,但会影响薄膜结构,溅射电压改变对薄膜的成分和结构均无明显影响。薄膜的力学性能是薄膜中内应力和晶态硬质相含量综合作用的结果。通过调整沉积参数以及热处理条件,可以获得性能优异的Ti-B-C薄膜。Ti-B-C films with different compositions and structures were deposited by unbalanced magnetron sputtering with Ti/B4C compound target. XRD, XPS and nano-indentation were used to analyze the composition, structure and mechanical properties of Ti-B-C films. The change of the deposition temperature affects little the composition, but can affect the structure of the films. The change of the excitation coil current influence the composition and structure of films. The sputtering voltage has little influence on the composition and structure of the films. The high performance films can be obtained by adjusting the deposition parameters and heat-treatment conditions.

关 键 词：Ti-B-C薄膜 力学性能 磁控溅射 

分 类 号：O484.4[理学—固体物理]