N5000材料凹蚀工艺研究  

Study of etch back process for N5000

作　　者：冷科 张利华 

机构地区：[1]深南电路有限公司,广东深圳518053

出　　处：《印制电路信息》2013年第S1期137-142,共6页Printed Circuit Information

摘　　要：文章对N5000材料的凹蚀进行了工艺研究,通过实验评估了玻纤蚀刻时间和等离子除胶时间的影响,获得了产品厚径比设计为10:1时的批量凹蚀加工方法,解决了这种设计的产品易发生的凹蚀不够和镀层打折缺陷,满足了N5000材料产品有高厚径比设计时的凹蚀需求!This article has studied Etch back process for N5000 materiel by evaluating the influence from glass etching time and plasma etching time. And we obtain the way of how to control the mass production when the products' Aspect ratio is 10:1, and we solved no enough etch back problem and plated copper drape problem of these products, satisfied the etch back process requirement of N5000 materiel which aspect ratio is 10:1.

关 键 词：凹蚀 镀层打褶 芯吸 

分 类 号：TN41[电子电信—微电子学与固体电子学]