电容式射频微机电系统开关损耗机制(英文)  

Loss mechanisms of radio frequency micro-electro-mechanical systems capacitive switches

作　　者：李沐华[1] 赵嘉昊[1] 尤政[1] 

机构地区：[1]清华大学精密仪器系,精密测试技术及仪器国家重点实验室,微纳制造、器件与系统协同创新中心,北京100084

出　　处：《强激光与粒子束》2015年第2期170-175,共6页High Power Laser and Particle Beams

基　　金：supported by National Natural Science Foundation of China(51205223)

摘　　要：插入损耗是射频微机电系统(RF MEMS)开关的关键性能指标之一。电容式RF MEMS开关是一种适合高频应用的开关器件,对其损耗机制进行了研究。电容式RF MEMS开关的射频损耗主要包括四部分:信号线的导体损耗、衬底损耗、辐射损耗以及MEMS桥损耗。对电容式RF MEMS开关建立了损耗模型并进行了数值计算,同时在HFSS有限元软件中进行了电磁仿真,数值计算结果和有限元仿真结果较好的吻合。此外,对影响电容式RF MEMS开关插入损耗的因素进行了分析,结果表明,高阻抗的衬底、200μm左右的导体宽度、较小的导体厚度以及较小的up态电容能够降低开关的插入损耗,提高开关的射频性能。Insertion loss is an important performance indicator for radio frequency micro-electro-mechanical systems(RF MEMS)switches.The RF MEMS capacitive switch is a kind of RF MEMS switch which is suitable for high frequency use.Its loss mechanisms are investigated in this paper.Four main parts contribute to the RF MEMS capacitive switch's insertion loss:conductor loss of the signal lines,substrate loss,radiation loss,and MEMS bridge loss.Loss models are built and calculated,and numerical calculation results agree well with simulation results.In addition,influence factors of insertion loss are analyzed,and results show that high resistivity substrate,conductor width around 200μm,smaller conductor thickness and smaller up-state capacitance can help lower the insertion loss.

关 键 词：损耗机制 射频微机电系统 电容式开关 共面波导 

分 类 号：TM564[电气工程—电器]