纳米晶LaNiAl薄膜充氦技术研究(英文)  

Nano-crystal LaNiAl film with helium charged

作　　者：范瑛[1] 郑思孝[2] 陶萍[1] 谭云[1] 

机构地区：[1]中国工程物理研究院总体工程研究所,四川绵阳621900 [2]四川大学核科学技术研究所,成都610064

出　　处：《强激光与粒子束》2015年第2期186-189,共4页High Power Laser and Particle Beams

基　　金：supported by Fundamental Technology Project of the National Defense Science and Industry(Z112012B002)

摘　　要：采用离子束辅助磁控溅射方法沉积出了纳米晶LaNiAl膜和纳米晶渗氦LaNiAl膜(膜厚约10μm),通过调节ArHe气氛的比例可控制纳米晶膜中的含氦量(He/LaNiAl的原子分数5.7%~13.8%),通过该方法引入到LaNiAl金属薄膜中的氦量远高于采用球磨法制备的纳米LaNiAl粉中的含氦量。研究结果表明:渗氦LaNiAl膜中的氦含量(原子分数)可达13.9%,氦在膜的深度方向分布均匀;热解析分析恒温条件下沉积的渗氦膜的起始释放温度为848K,最高释放温度为1407K,主释放峰为1080K,初步确定了氦主要是以团簇的形式存在于在纳米晶膜中。Nano-crystalline LaNiAl film charged with helium atoms is prepared by magnetron co-sputtering.Low energy helium-4atoms implantation is carried out by magnetron co-sputtering technique with Ar/He mixture gases around during the film growth.During the sputtering process,the ionized He atoms bombarding the cathode target are backscattered and implanted into the growing film.The film is CaCu5-type structure analyzed by XRD.Helium concentration is measured by proton backscattering spectroscopy(PBS),the most atom fraction of helium is 12.2%.Deduced by thermal desorption experiments and TEM,helium exists as He-V cluster in the nano-crystal films.Compared with 3 He in a tritide,the implanted He in metal film is still quite different,but it is a good way to study how helium atom exists in La-Ni-Al inter-metallic compound.

关 键 词：磁控溅射 纳米晶粒 LaNiAl薄膜 渗氦 

分 类 号：TB383.1[一般工业技术—材料科学与工程]