硅烷馈入方式对微晶硅薄膜光发射谱和结构的影响  

Influence of silane injection ways on optical emission spectroscopy and microstructure of microcrystalline silicon thin film

作　　者：李新利[1,2,3] 任凤章[1,2] 马战红[1,2] 李武会[1,2] 王宇飞[1,2] 卢景霄[3] 

机构地区：[1]河南科技大学材料科学与工程学院,河南洛阳471023 [2]有色金属共性技术河南协同创新中心,河南洛阳471023 [3]郑州大学材料物理教育部重点实验室,河南郑州450052

出　　处：《材料热处理学报》2015年第4期7-12,共6页Transactions of Materials and Heat Treatment

基　　金：河南省科技创新人才计划(144200510009);河南省重点攻关(092102210012)

摘　　要：采用SR500光谱光度计对甚高频等离子体增强化学气相沉积本征微晶硅薄膜过程进行了在线监测,分析了硅烷不同注入方式对等离子体光发射谱和薄膜结构的影响。结果表明,采用硅烷梯度注入时,等离子体中的Hα*、Hβ*和Si H*峰强度逐步升高,且高的Hα*/Si H*比值有利于高晶化率界面层的沉积;这与采用XRD分析薄膜的结构得到的结果一致。选择硅烷梯度注入方式沉积微晶硅薄膜电池本征层,在沉积速率为1 nm/s本征层厚度为2400 nm时,最终获得了光电转换效率为7.81%的单结微晶硅薄膜太阳能电池。The microcrystalline silicon thin films and solar cells were deposited using very high frequency plasma enhanced chemical vapor deposition( VHF-PECVD) method. The growth process of intrinsic microcrystalline silicon thin films deposited with different Si H4 injection ways was online monitored by optical emission spectroscopy. The results show that using the silane profiling injection way is better than the other two injection ways in the film growth. During the thin film growth process,the emission intensity of Hα*,Hβ*and Si H*shows an increase tendency,and the higher ratio of Hα*/ Si H*in the initial deposition stage can contribute to the formation of high quality interfacial layer. Using this way,a significant improvement in the solar cell performance is achieved. A high conversion efficiency of 7. 81% is obtained for a single-junction microcrystalline silicon solar cell at the deposition rate of 1 nm / s.

关 键 词：硅烷馈入方式 等离子体 光发射谱 微晶硅薄膜 太阳能电池 

分 类 号：TM914.4[电气工程—电力电子与电力传动] TB383.2[一般工业技术—材料科学与工程]