磁控溅射法制备Cu_2ZnSnS_4薄膜及其性能表征  

Fabrication and characterization of Cu_2ZnSnS_4 thin films prepared by magnetron sputtering

作　　者：华中[1] 孟祥成[1] 孙亚明[1] 于万秋[1] 龙东[1] 张守琪[1] 

机构地区：[1]吉林师范大学功能材料物理与化学教育部重点实验室,吉林四平136000

出　　处：《材料热处理学报》2015年第6期202-205,共4页Transactions of Materials and Heat Treatment

基　　金：吉林师范大学研究生创新研究计划(2013005)

摘　　要：利用磁控溅射法将Cu/Sn/Zn S前驱体沉积在钙钠玻璃基片上,再通过硫化该前驱体制备Cu2ZnSnS4薄膜。利用X射线衍射仪、拉曼光谱仪、扫描电子显微镜、能谱仪、霍尔效应测量系统和紫外可见分光光度计研究了Cu2ZnSnS4薄膜的微观结构、表面形貌、化学成分、电学和光学性能。结果表明,CZTS薄膜的微观结构依赖于硫化温度和时间。在480℃硫化3 h的薄膜为沿(112)晶面择优取向生长的纯相CZTS薄膜,该薄膜的禁带宽度是1.51 e V,其电阻率和载流子浓度分别为0.39Ω·cm和4.07×1017cm-3。Cu2ZnSnS4( CZTS) thin films were prepared by sulfurization of Cu/Sn/ZnS precursors. The precursors were deposited on sodalime glass substrates by magnetron sputtering method. The microstructure,surface morphology,chemical composition,electrical and optical properties of thin films were investigated by X-ray diffraction( XRD),Raman scattering( Raman),scanning election microscopy( SEM),energy dispersive spectroscopy,Hall effect measurements and UV-visible spectrophotometer( UV-VIS). The results show that the microstructure of the CZTS films depends on the sulfurization temperature and time. The thin film annealed at 480 ℃ for 3 h shows a single phase CZTS with( 112) preferred orientation. The band gap of the film annealed at 480 ℃ for 3 h is 1. 51 e V. Its resistivity and carrier concentration are 0. 39 Ω·cm and 4. 07 × 1017cm-3,respectively.

关 键 词：Cu2ZnSnS4 磁控溅射 硫化 薄膜 

分 类 号：TB306[一般工业技术—材料科学与工程]