碳化硅量子点表面物化特性调控及其光学特性  

Regulation of Physicochemical Characteristics on Surface of SiC Quantum Dots and Its Optical Properties

作　　者：康杰[1] 宋月鹏[1,2,3] 朱彦敏 高东升[2] 郭晶[1,3] 许令峰[1] KIM Hyoungseop 

机构地区：[1]山东农业大学机械与电子工程学院山东省园艺机械与装备重点实验室,山东泰安271018 [2]山东农业大学园艺科学与工程学院,山东泰安271018 [3]浦项工科大学材料科学与工程学院,韩国浦项790784

出　　处：《硅酸盐学报》2015年第4期431-436,共6页Journal of The Chinese Ceramic Society

基　　金：山东省科技发展计划项目(2014GGB01380);"十二五"国家支撑计划项目(2011BAD12B02);山东省博士后创新基金(201203101);中国博士后科学基金(2013M53163)项目

摘　　要：采用化学偶联法,通过调整腐蚀剂组分及其相对含量,一步法实现了碳化硅量子点(SiC-QDs)表面物化特性的有效调控。研究表明:经硝酸(HNO_3)和氢氟酸(HF)混合腐蚀剂腐蚀纳米β-SiC粉末,通过超声空化破碎分散及高速离心处理,可获得SiC-QDs水相溶液,并一步法实现了表面修饰,在其表面形成了—COO、—OH等亲有机物功能基团。采用浓硫酸(H_2SO_4)为偶联剂,制备出表面具有巯基(—SH)的SiC-QDs水相溶液。腐蚀剂组分的相对含量对于SiC-QDs的光致发光强度与表面巯基的形成影响较大。在波长为340 nm的激发光激发下,SiC-QDs具有最大的发光强度,随着腐蚀剂中H_2SO_4含量的增加,其光致发光强度呈现降低趋势。当腐蚀剂的体积比为V(HF):V(HNO_3):V(H_2SO_4)=6:1:1时,制备的水相SiC-QDs表面既能稳定耦合—SH,又可以获得较高的光致发光强度。另外,对表面物化特性调控及其形成机制进行了分析研究。One-step effective regulation of physicochemical characteristics on the surface of SiC quantum dots(QDs) was obtained by a chemical coupling method via the adjustment of the component and relative content of etchant.The results indicate that the aqueous SiC-QDs are prepared with SiC nanoparticles etched in a mixed chemical etchant of nitric acid(HNO_3) and hydrofluoric acid(HF) via ultrasonic cavitation dispersion and high-speed centrifugal treatment.Some hydrophilic organic functional groups,such as carboxyl(-COO),hydroxyl(-OH) and so on,on the surface of SiC-QDs are formed in the process of fabrication.In addition,hydrosulphonyl(-SH) is also prepared via one-step for sulfuric acid(HNO_3) as a coupling reagent and the addition of the mixed acid(i.e.,HF and HNO_3).The component and relative content of mixed-acid etchant can affect the hydrosulphonyl formation and photoluminescence(PL)intensity.The results show that the maximum light intensity of SiC-QDs is emitted at a 340 nm exciting light wavelength,and the PL intensity decreases with increasing the content of H_2SO_4.The aqueous SiC-QDs surface prepared can be stable and coupled with-SH,thus obtaining a high photoluminescence strength,when the volume ratio of H_2SO_4 to HNO_3 is 1:1(i.e.,V(HF):V(HNO_3):V(H_2SO_4)=6:1:1).In addition,the regulation of physicochemical characteristics on the surface of SiC-QDs and the formation mechanism are also analyzed.

关 键 词：碳化硅量子点 表面物化特性 光学特性 腐蚀法 

分 类 号：O471.1[理学—半导体物理]